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首页> 外文期刊>Nature physics >Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures
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Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures

机译:过渡金属二甲基化物van der Waals异质结构中的动量空间间接层间激子

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摘要

Monolayers of transition-metal dichalcogenides feature exceptional optical properties that are dominated by tightly bound electron-hole pairs, called excitons. Creating van der Waals heterostructures by deterministically stacking individual monolayers can tune various properties via the choice of materials(1) and the relative orientation of the layers(2,3). In these structures, a new type of exciton emerges where the electron and hole are spatially separated into different layers. These interlayer excitons(4-6) allow exploration of many-body quantum phenomena(7,8) and are ideally suited for valleytronic applications(9). A basic model of a fully spatially separated electron and hole stemming from the K valleys of the monolayer Brillouin zones is usually applied to describe such excitons. Here, we combine photoluminescence spectroscopy and first-principles calculations to expand the concept of interlayer excitons. We identify a partially charge-separated electron-hole pair in MoS2/WSe2 heterostructures where the hole resides at the Gamma point and the electron is located in a K valley. We control the emission energy of this new type of momentum-space indirect, yet strongly bound exciton by variation of the relative orientation of the layers. These findings represent a crucial step towards the understanding and control of excitonic effects in van der Waals heterostructures and devices.
机译:过渡金属二甲硅藻的单层特征是由紧密结合的电子孔对主导的特殊光学性质,称为激子。通过确定堆叠单独的单层来制造范德华异质结构可以通过选择材料(1)和层的相对取向来调谐各种性质(2,3)。在这些结构中,新型的激子出现,其中电子和孔在空间上分离成不同层。这些层间激子(4-6)允许探索许多身体量子现象(7,8),非常适用于谷坑应用(9)。通常施加来自单层布里渊区的K谷的完全空间分离的电子和孔的基本模型,用于描述这种激子。在这里,我们将光致发光光谱和第一原理计算结合起来扩展层间激子的概念。我们在MOS2 / WSE2的异质结构中识别部分电荷分离的电子 - 空穴对,其中孔位于伽马点,并且电子位于K谷中。通过层叠层的相对取向来控制这种新型动量空间间接的发射能量,但是强烈地绑定的激子。这些发现代表了对van der Waals异质结构和器件的兴趣效应的理解和控制的关键步骤。

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