It is demonstrated that double-crystal X-ray diffractometry, which has been known for more than 50 years, is a powerful tool for the characterization of modern materials used in microelectronics and nanoelectronics that makes it possible to thoroughly investigate very thin layers and interfaces of nanometer sizes in complex heterostructures. The physical and mathematical principles of this method are analyzed, and the most prominent examples of its application are given. It is established that, in a number of cases, quantum-layer displacements as small as several hundredths of a nanometer can be reliably determined in heterostructures.
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