Three dimensional numerical study of the effect of large Grashof number on HEM crystal growth

摘要

Heat transfer and fluid flow in HEM crystal growth of silicon in cylindrical cavity is studied numerically. The walls of the crucible are heated to a fixed temperature. The exchanger that causes and induces natural convection is seated at the middle-bottom of the crucible. The finite-volume method is employed to solve the governing equations with proper boundary conditions. The effects of transport mechanism on the temperature distribution, melt flow, pressure and stream function are presented. We focus our work on the pressure field which has not yet been studied in HEM crucible. Also, we extend our work on a wide range Grashof number and for large numbers until 1012 not yet studied in HEM furnace. It is found that the onset of flow fluctuations appears at Gr = 10(10). Uniform temperature is observed in the entire melt at high Grashof number with development of a thermal boundary layer close to the exchanger. The thermal boundary layer thickness is calculated for strong buoyancy regime. Besides, for very high Gr number, buoyancy has less effect on temperature and then on melt-crystal interface shape. During enlarging Gr, pressure evolution is related to temperature variation more than flow pattern.