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首页> 外文期刊>Metrology and Measurement Systems: Metrologia i Systemy Pomiarowe >LEAKAGE CURRENT DEGRADATION DUE TO ION DRIFT AND DIFFUSION IN TANTALUM AND NIOBIUM OXIDE CAPACITORS
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LEAKAGE CURRENT DEGRADATION DUE TO ION DRIFT AND DIFFUSION IN TANTALUM AND NIOBIUM OXIDE CAPACITORS

机译:由于钽和铌氧化物电容器中的离子漂移和扩散引起的漏电流降解

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摘要

High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL) variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125 degrees C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5. Here, the equilibrium between the ion drift and diffusion is achieved. The process of leakage current degradation is therefore partially reversible. When the external electric field is lowered, or the samples are shortened, the leakage current for a given voltage decreases with time and the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5, thus the ion redistribution by diffusion becomes dominant.
机译:钽和铌电容器中的高温和高电场应用受钽或铌五氧化铌绝缘层中的离子迁移和场结晶机理的限制。由于温度和电场的增加,由于温度和电场而导致的漏电流(DCL)变化的研究可能提供有关降解物理机制的信息。在约125℃的温度下对钽和氧化铌电容器进行实验,并施加电压,范围为钽和氧化铌电容器的35V和16V的额定电压。在实验之前,假设在实验前呈氧空位作为二氧化氧基层内的正离子的均匀分布。 DCL与固定温度的时间特性有几个阶段。在老化开始时,DCL随着时间的推移呈指数增长。在该周期中,绝缘层中的离子通过漂移在电场中移动。由于阴极附近的离子浓度增加,在阴极附近产生带正电的区域。阴极附近的电场增加,阴极和绝缘层之间的电位屏障减小,这导致DCL增加。然而,绝缘体层中的正离子的再分布导致采集离子浓度梯度,这导致离子扩散电流在与离子漂移电流部件相反的方向上的逐渐增加。对于给定温度和电场之间的两个之间的平衡导致漏电流值的饱和度。 DCL与时间特征描述了指数拉伸法律。我们发现,在老化的初始部分期间,指数n = 1适用。这仅对应于离子漂移运动。在高温下长时间施加电场之后,DCL与时间特征由指数n = 0.5的指数拉伸定律描述。这里,实现了离子漂移和扩散之间的平衡。因此,泄漏电流降解的过程是部分可逆的。当外部电场降低或缩短样品时,给定电压的漏电流随时间和DCL与时间特征减少,指数拉伸定律具有指数n = 0.5,因此离子再分布扩散变得优势。

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