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ACRT forced convection and its effects on solute segregation and heat and mass transfer during single crystal growth

机译:ACRT强制对流及其对单晶生长过程中溶质偏析和传热传质的影响

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A numerical simulation study was carried out for CdZnTe vertical Bridgman method crystal growth with the accelerated crucible rotation technique (ACRT). The convection, heat and mass transfer in front of the solid-liquid interface, and their effects on the solute segregation of the grown crystal can be characterized with the following. ACRT brings about a periodic forced convection in the melt, of which the intensity and the incidence are far above the ones of the natural convection without ACRT. This forced convection is of multiformity due to the changes of the ACRT parameters. It can result in the increases of both the solid-liquid interface concavity and the temperature gradient of the melt in front of the solid-liquid interface, of which magnitudes vary from a little to many times as the ACRT wave parameters change. It also enhances the mass transfer in the melt in a great deal, almost results in the complete uniformity of the solute distribution in the melt. With suitable wave parameters, ACRT forced convection decreases the radial solute segregation of the crystal in a great deal, even makes it disappear completely. However, it increases both the axial solute segregation and the radial one notably with bad wave parameters. An excellent single crystal could be gotten, of which the most part is with no segregation, by adjusting both the ACRT wave parameters and the crystal growth control parameters, e.g. the initial temperature of the melt, the temperature gradient, and the crucible withdrawal rate. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:利用加速坩埚旋转技术(ACRT)对CdZnTe垂直布里奇曼法晶体生长进行了数值模拟研究。固液界面前的对流,传热和传质及其对生长晶体溶质偏析的影响可通过以下特征进行表征。 ACRT在熔体中产生周期性的强制对流,其强度和入射率远高于没有ACRT的自然对流。由于ACRT参数的变化,这种强制对流具有多种形式。它可能导致固液界面凹度和固液界面前熔体温度梯度的增加,随着ACRT波参数的变化,其幅度变化幅度很小到很多倍。它还大大提高了熔体中的传质,几乎导致了熔体中溶质分布的完全均匀性。有了合适的波动参数,ACRT强制对流会大大降低晶体的径向溶质偏析,甚至使其完全消失。但是,它会增加轴向溶质偏析和径向溶质偏析,尤其是在波参数较差的情况下。通过调节ACRT波参数和晶体生长控制参数(例如,晶体密度),可以制得极好的单晶,其中大部分没有偏析。熔体的初始温度,温度梯度和坩埚抽出率。 (C)2008 WILEY-VCH Verlag GmbH&Co.KGaA,Weinheim。

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