...
首页> 外文期刊>Fortschritte der Physik >Surface, interface and electronic properties of F8:F8BT polymeric thin films used for organic light-emitting diode applications
【24h】

Surface, interface and electronic properties of F8:F8BT polymeric thin films used for organic light-emitting diode applications

机译:F8的表面,接口和电子性能:F8BT聚合物薄膜用于有机发光二极管应用

获取原文
获取原文并翻译 | 示例
           

摘要

Ultrathin polymeric films consisting of poly(9,9-di-n-octylfluorenyl-2,7-diyl) (F8) blended with poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) grown onto PEDOT:PSS/ITO/PET were investigated by X-ray photoelectron spectroscopy (XPS), depth-profiling XPS, reflection electron energy loss spectroscopy (REELS) and angle-dependent X-ray absorption spectroscopy (XAS) to gain information on the films' electronic, order and interface properties. AFM studies provide valuable information on the films' nanotopographical properties and homogeneity. Spectroscopic ellipsometry and photoluminescence spectroscopy were used also to obtain information on the optoelectronic properties. Well-ordered films were observed from the XAS analysis, measured at the sulfur K absorption edge. XPS measurements demonstrated that the surface composition of the polymer thin films prepared by a spin-coating wet-chemical deposition method matches the expected F8:F8BT blend stoichiometry. The interfacial properties were studied through an argon ion sputtering process coupled to the XPS acquisition, showing an enhancement of oxygen components at the interface. The films' inhomogeneity was verified by AFM images and analysis. We obtained a value of 3.1 eV as the electronic bandgap of the F8:F8BT film from REELS data, whereas analysis of the spectroscopic ellipsometry spectra revealed that the optical bandgap of F8:F8BT has a value of 2.4 eV. A strong green emission was obtained for the produced films, which is in agreement with the expected emission due to the 1:19 ratio of the F8 and F8BT blended polymers. (C) 2018 Society of Chemical Industry
机译:由聚(9,9-二 - 辛基氟烯基-2,7-二基)(F8)组成的超薄聚合物膜与聚(9,9-二辛基氟烯-ALT-苯并噻唑)(F8BT)生长在PEDOT上:PSS / ITO / PET通过X射线光电子能谱(XPS),深度分析XPS,反射电子能量损失光谱(REELS)和角度依赖性X射线吸收光谱(XAS)进行研究,以获得关于电影的电子,秩序和的信息接口属性。 AFM研究提供了有关薄膜的纳米模式和均匀性的有价值的信息。使用光谱椭圆形和光致发光光谱法也用于获得有关光电性质的信息。从XAS分析中观察到良好的薄膜,在硫磺K吸收边缘测量。 XPS测量表明,通过旋涂湿化学沉积方法制备的聚合物薄膜的表面组成与预期的F8:F8BT混合化学计量相匹配。通过耦合到XPS采集的氩离子溅射工艺研究界面性质,显示界面处的氧部件的增强。通过AFM图像和分析验证了膜的不均匀性。我们获得了从卷轴数据的F8:F8BT膜的电子带隙的值为3.1eV,而光谱椭圆形光谱的分析表明F8:F8BT的光学带隙具有2.4eV的值。由于F8和F8BT共混聚合物的1:19比例,所生产的薄膜获得强大的绿色发射,这是与预期发射的预期发射。 (c)2018化学工业协会

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号