机译:不同氧气局部压力对Ni / HFOX /锡电阻开关装置切换性能的影响
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
Tianjin Univ Technol Sch Elect &
Elect Engn Tianjin Key Lab Film Elect &
Commun Devices Tianjin 300384 Peoples R China;
resistive random access memory; HfOx thin film; oxygen partial pressure; resistive switching mechanism;
机译:不同氧气局部压力对Ni / HFOX /锡电阻开关装置切换性能的影响
机译:TiN / HfOx / ITO器件在电阻随机存取存储器中的双极电阻开关特性
机译:电阻开关氧化铟锡/ HfOx器件中的双功能非易失性和易失性存储器
机译:原子层沉积温度对HfOx电阻式RAM器件开关特性的影响
机译:基于五氧化二铜-铂金器件结构的纳米交叉电阻开关存储器的制作
机译:硫磺掺杂HFOX基RRAM的电阻切换性能提高
机译:原子层沉积温度对HfOx电阻式Ram器件开关特性的影响