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首页> 外文期刊>Materials science in semiconductor processing >Synthesis and functional properties of nanostructured Gd-doped WO3/TiO2 composites for sensing applications
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Synthesis and functional properties of nanostructured Gd-doped WO3/TiO2 composites for sensing applications

机译:纳米结构GD掺杂WO3 / TiO2复合材料的合成和功能性能进行传感应用

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摘要

Gd-doped WO3 and Gd-doped WO3/TiO2 nanocomposites were synthesized using simple acid preparation and hydrothermal method. Gd-doped WO3 improves the sensing properties by creating more oxygen vacancy. The structural and morphological analysis confirms the formation of Gd-doped WO3/TiO2 nanocomposites. By addition of TiO2 to various concentration of Gd-doped WO3, the change in morphology from disordered nanosheets to flake-like morphology was observed. The chemical composition of the samples were confirmed by XPS analysis. The elemental mapping confirms the presence of Gd, W, O and Ti elements in the nanocomposites. The optical studies confirmed the changes in bandgap with doping of Gd. The sensor sensitivity was found to be greatly influenced by addition of Gd in WO3 and WO3/TiO2 and the high response was observed for 3% Gd-doped composites towards ammonia.
机译:使用简单的酸制剂和水热法合成GD掺杂WO3和GD掺杂WO3 / TiO2纳米复合材料。 GD-DOPED WO3通过产生更多氧气空位来改善感测性质。 结构和形态学分析证实了GD掺杂WO3 / TiO2纳米复合材料的形成。 通过向各种浓度的GD掺杂WO3加入TiO 2,观察到来自无序纳米片的形态变化以塑料状形态。 通过XPS分析证实样品的化学成分。 元素映射证实纳米复合材料中的GD,W,O和TI元素的存在。 光学研究证实了GD掺杂带隙的变化。 发现传感器灵敏度在WO3和WO3 / TiO 2中添加Gd,并且观察到3%GD掺杂复合材料朝向氨的高响应。

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    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    Tokai Univ Micro Nano Technol Ctr Hiratsuka Kanagawa Japan;

    Tokai Univ Micro Nano Technol Ctr Hiratsuka Kanagawa Japan;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

    SRM Inst Sci &

    Technol Dept Phys &

    Nanotechnol Funct Mat &

    Energy Devices Lab Chennai 603203 Tamil Nadu India;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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