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首页> 外文期刊>Macromolecular chemistry and physics >Violet Emission of ALD-Grown ZnO Nanostructures on Confined Polymer Films: Defect Origins and Emission Control via Interface Engineering Based on Confinement of the Bottom Polymer Template
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Violet Emission of ALD-Grown ZnO Nanostructures on Confined Polymer Films: Defect Origins and Emission Control via Interface Engineering Based on Confinement of the Bottom Polymer Template

机译:基于底部聚合物模板的限制,通过界面工程缺陷起始ZnO纳米结构的紫色发射:缺陷起源和排放控制

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摘要

ZnO thin films on polymer templates (polystyrene, PST) show strong influence of the interface via degree of confinement of the bottom polymer template in introducing the controlled defect levels in the ZnO nanostructures and consequently yield significant variation at room temperature photoluminescence (PL). The thickness of the polymer thin film in terms of its radius of gyration (Rg) defines the degree of confinement of PST. Simultaneous growth of ZnO thin films by atomic layer deposition (ALD) with 150 cycles at 35 °C on spin-coated polystyrene (PS) films of different thicknesses forms sets of ZnO/ PST hybrid systems. The ZnO thin film exhibits a distinct/unusual violet emission (2.95 eV) along with the common near-band-edge and green emissions, when it grows on 6.5Rg PST. Such defect-induced emissions disappear with increasing degree of confinement of the bottom PST from 6.5Rg to 1.5Rg, and sharper UV peak dominates the PL spectra along with a prominent redshift in near-band-edge. Furthermore, with increasing film thickness of the bottom PST template from 1.5Rg to 6.5Rg, the ALD growth rate of ZnO increases by 25%. The study offers new insights into the research on opto-electronic applications of ZnO thin films in the emerging field of organic electronics.
机译:在聚合物模板(聚苯乙烯,PST)上的ZnO薄膜显示界面通过底部聚合物模板的限制对ZnO纳米结构中的受控缺陷水平进行强烈影响,从而在室温光致发光(PL)下产生显着的变化。其环状半径(RG)方面的聚合物薄膜的厚度定义了PST的限制程度。用150次循环在35℃下在不同厚度的纺丝聚苯乙烯(PS)薄膜上具有150个循环的原子层沉积(ALD)同时生长ZnO / PST混合系统组。 ZnO薄膜随着6.5Rg PST的增长而具有明显/不寻常的紫色发射(2.95eV)以及共同的近边缘和绿色排放。这种缺陷诱导的排放随着从6.5Rg到1.5RG的底部PST的增加而消失,并且锐利紫外线峰位于PL光谱以及近带边缘的突出红移。此外,随着底部PST模板的薄膜厚度从1.5Rg增加到6.5Rg,ZnO的ALD生长速率增加了25%。该研究为ZnO薄膜的光电应用研究提供了新的见解,在有机电子产品中的新兴领域。

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