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首页> 外文期刊>Macromolecular Research >Impact of Topology of Alkoxy Side Chain in Alkoxyphenylthiophene Subsituted Benzodithiophene Based 2D Conjugated Low Bandgap Polymers on Photophysical and Photovoltaic Properties
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Impact of Topology of Alkoxy Side Chain in Alkoxyphenylthiophene Subsituted Benzodithiophene Based 2D Conjugated Low Bandgap Polymers on Photophysical and Photovoltaic Properties

机译:烷氧基侧链在烷氧基噻吩亚亚硝基噻吩基二十缀合的低带隙聚合物上的光学和光伏性能下的影响

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摘要

We report a new series of low band gap (LBG) polymers (P1-P4), in which para or meta- alkoxyphenylthiophene (APTh) substituted benzodithiophene and 2,5-ethylhexyl-3,6-bis(5-bromothiophen-2-yl)pyrrolo[3,4-c]-pyrrole-1,4-dione or 2-ethylhexyl-4,6-dibromo-3-fluorothieno[3,4-b]thiophene-2-carboxylate are key repeating units. All the polymers showed broad absorption profiles over 900 nm with reduced optical band gaps (E (g) (opt) ). Interestingly, the straightforward modification (exchanging the topology of alkoxy side chain on phenyl group of APTh in donor unit) brought considerable changes in photophysical and photovoltaic properties of new polymers. In particular, meta-substituted polymers (P2, P4) showed reduced E (g) (opt) (1.26, 1.41 eV), deep highest occupied molecular orbitals (HOMOs) (-5.23, -5.28 eV) than para-substituted polymers P1, P3 (E (g) (opt) =1.33, 1.44 eV; HOMOs=-5.19, -5.20 eV). Furthermore, the optimized P2 and P4 based devices delivered an enhanced power conversion efficiency (PCE) of 4.39 and 4.33%, with open-circuit voltage (V (oc) ) of 0.71 and 0.79 V, respectively, which are higher than P1 (PCE of 2.95 with V (oc) of 0.65) and P3 (PCE of 2.33% with V (oc) of 0.69 V) based devices.
机译:我们报告了一种新的一系列低带隙(LBG)聚合物(P1-P4),其中帕拉或元烷氧基苯基烯(APTH)取代的苯二苯甲烷和2,5-乙基己基-3,6-双(5-溴噻吩-2- Y1)吡咯并[3,4-C] - 吡咯-1,4-二酮或2-乙基己基-4,6-二溴-3-氟噻吩[3,4-B]噻吩-2-羧酸酯是关键的重复单元。所有聚合物显示出超过900nm的宽吸收曲线,并且光带间隙降低(E(g)(选择))。有趣的是,直接改性(在供体单元中的APTH的苯基上交换烷氧基侧链的拓扑)使得新聚合物的光学和光伏性能具有相当大的变化。特别地,荟萃取代的聚合物(P2,P4)显示出e(g)(opt)(1.26,1.41eV),深度最高占用的分子轨道(Homos)(-5.23,-5.28eV)比帕拉取代的聚合物p1 ,P3(e(g)(opt)= 1.33,1.44ev; homos = -5.19,-5.20ev)。此外,优化的P2和P4的器件提供了4.39和4.33%的增强功率转换效率(PCCE),开路电压(V(v(oc))分别为0.71和0.79 V,高于P1(PCE 2.95的V(OC)为0.65)和P3(PCE为2.33%,V(OC)为0.69 V)的设备。

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