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首页> 外文期刊>Advances in Applied Ceramics >Studies on polycrystalline layered ceramic oxide: LiFeVO_4
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Studies on polycrystalline layered ceramic oxide: LiFeVO_4

机译:多晶层状陶瓷氧化物LiFeVO_4的研究

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A new polycrystalline layered ceramic oxide, LiFeVO_4, has been prepared by a standard solid state reaction technique. The preparation conditions were optimised using thermogravimmetric analysis (TGA) technique. Material formation under the reported conditions was confirmed by X-ray diffraction studies. A preliminary structural analysis indicated that the crystal structure was orthorhombic with lattice parameters: a=4.3368 A, b=13.1119 A and c=16.3426 A. The phase morphology and surface property were studied by scanning electron microscopy. Complex impedance analysis of the sample indicated bulk contribution to electrical properties at T < = 125 deg C, grain boundary effects at the temperatures > = 125 deg C, negative temperature coefficient of resistance (NTCR) effect and evidence of temperature dependent electrical relaxation phenomena in the sample. The dc conductivity sigma_(dc) shows typical Arrhenius behaviour when observed as a function of temperature. The activation energy value was estimated to be 0-24 eV. The value of sigma_(dc), evaluated from complex impedance spectrum, shows a jump of nearly two orders of magnitude at higher temperature (-1.24 x 10~(-5) S cm~(-1) at 350 deg C) when compared with that of sigma_(dc) (1.14x 10~(-6) S cm~(-1) at 50 deg C). Alternating current conductivity spectrum obeys Jonscher's universal power law. The results of sigma_(ac) v. temperature are also discussed.
机译:通过标准的固态反应技术已经制备了一种新的多晶层状陶瓷氧化物LiFeVO_4。使用热重分析(TGA)技术优化了制备条件。通过X射线衍射研究证实了在报道的条件下的材料形成。初步结构分析表明,晶体结构为正交晶,晶格参数为:a = 4.3368 A,b = 13.1119 A,c = 16.3426A。通过扫描电子显微镜研究了相形态和表面性质。样品的复阻抗分析表明,在T <= 125℃时,大量成分对电性能有贡献;在> = 125℃的温度下,晶界效应;电阻的负温度系数(NTCR)效应;以及温度依赖性电松弛现象的证据。样品。当观察到作为温度的函数时,直流电导率sigma_(dc)显示出典型的阿累尼乌斯行为。活化能值估计为0-24 eV。根据复数阻抗谱评估的sigma_(dc)值显示,在高温下(350摄氏度时为1.24 x 10〜(-5)S cm〜(-1))跃升了近两个数量级。与sigma_(dc)(在50摄氏度时为1.14x 10〜(-6)S cm〜(-1))相同。交流电导率频谱服从Jonscher的通用功率定律。还讨论了σ(ac)v。温度的结果。

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