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A surprising way to control the charge transport in molecular electronics: the subtle impact of the coverage of self-assembled monolayers of floppy molecules adsorbed on metallic electrodes

机译:一种令人惊讶的方法来控制分子电子的电荷运输:在金属电极上吸附的软包分子的自组装单层覆盖的微妙影响

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摘要

Inspired by earlier attempts in organic electronics aiming at controlling charge injection from metals into organic materials by manipulating the Schottky energy barrier using self-assembled monolayers (SAMs), recent experimental and theoretical work in molecular electronics showed that metal-organic interfaces can be controlled via changes in the metal work function that are induced by SAMs. In this paper we indicate a different route to achieve interface-driven control over the charge transfer/transport at the molecular scale. It is based on the fact that, in floppy molecule based SAMs, the molecular conformation can be tuned by varying the coverage of the adsorbate. We demonstrate this effect with the aid of benchmark molecules that are often used to fabricate nanojunctions and consist of two rings that can easily rotate relative to each other. We show that, by varying the coverage of the SAM, the twisting angle phi of the considered molecular species can be modified by a factor of two. Given the fact that the low bias conductance G scales as cos(2) phi, this results in a change in G of over one order of magnitude for the considered molecular species. Tuning the twisting angle by controlling the SAM coverage may be significant, e.g., for current efforts to fabricate molecular switches. Conversely, the lack of control over the local SAM coverage may be problematic for the reproducibility and interpretation of the STM (scanning tunneling microscope) measurements on repeatedly forming single molecule break junctions.
机译:通过早期尝试通过使用自组装单层(SAMS)操纵肖特基能量屏障来控制从金属中的电荷注射到有机材料中的有机电子产品的启发,最新的分子电子的实验和理论工作显示了金属有机界面可以通过SAMS引起的金属工作功能的变化。在本文中,我们表示在分子尺度上通过电荷转移/传输实现接口驱动控制的不同途径。它基于以下事实:在基于软缺水分子的SAM中,可以通过改变吸附物的覆盖物来调节分子构象。我们借助于经常用于制造纳米函数的基准分子来证明这种效果,并且由两个可以容易地彼此旋转的环组成。我们表明,通过改变SAM的覆盖范围,所以考虑的分子种类的扭曲角度PHI可以通过两个因子来修饰。鉴于低偏置电导G刻度为COS(2)PHI,这导致G对于所考虑的分子物种的一个级的G的变化。通过控制SAM覆盖范围来调谐扭曲角度可能是显着的,例如,用于制造分子开关的努力。相反,对局部SAM覆盖物的控制缺乏可能是关于重复形成单分子断裂结的STM(扫描隧道显微镜)测量的再现性和解释的问题。

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