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Multi-Stage 8 & x00D7; 8 Silicon Photonic Switch Based on Dual-Microring Switching Elements

机译:多级8&X00D7; 8基于双微管开关元件的硅光子开关

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摘要

We demonstrate the first multi-stage 8 & x00D7; 8 silicon photonic switch with switching elements based on dual add-drop microrings with a compact footprint of 4 mm(2). This device leverages co-design of the switch architecture and the switching elements with a well-balanced set of performance metrics. The switching elements are designed to have a 3-dB optical passband of 165 & x00A0;GHz, exhibiting off- and on-resonance losses of 0.67 & x00A0;dB and 2 & x00A0;dB, respectively. Full characterization of all switch paths shows an end-to-end on-chip loss between 4.4 and 9.6 & x00A0;dB, with worst-case crosstalk leakage averaged at -16 & x00A0;dB. Owing to the efficient doped waveguide thermo-optic phase shifters, the device features a tuning efficiency of 48.85 & x00A0;GHz & x002F;mW. The reconfiguration time of the switch fabric is measured to be 1.2 & x03BC;s and 0.5 & x03BC;s at the rise and fall edge, respectively. The dual-microring switching element together with the multi-stage architecture preserves an end-to-end passband over 55 & x00A0;GHz. We validate the switch performance with optical paths of varying numbers of on- and off-resonance switching elements - less than 2 & x00A0;dB power penalties are obtained for all data routings at 32 & x00A0;Gbps.
机译:我们展示了第一个多阶段8和X00D7; 8带开关元件的硅光子开关,基于双加液磁光机,紧凑的占地面积为4 mm(2)。该设备利用了交换机架构和开关元件的共同设计,具有良好的性能度量集。开关元件设计成具有165&X00A0的3dB光通带; GHz,呈现出0.67&x00a0的偏振损耗,分别为0.67&x00a0; db和2&x00a0; db。所有开关路径的全面表征显示了4.4和9.6&X00A0之间的端到端片上损耗; DB,具有最差的串扰泄漏,平均为-16和x00a0; db。由于高效的掺杂波导热光相移器,该装置的调谐效率为48.85&x00a0; ghz&x002f; mw。切换织物的重新配置时间分别测量为1.2&x03bc; s和0.5&x03bc; s分别在上升和跌倒边缘。双微型开关元件与多级架构一起保留超过55&x00a0的端到端通带; GHz。我们使用不同数量的开关元件的光路验证开关性能 - 小于2&x00a0;为32&x00a0的所有数据路由获得DB功率损失; Gbps。

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