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首页> 外文期刊>Advanced Science, Engineering and Medicine >Dissociation-Chemisorption Pathways of H_2 Molecule on Graphene Activated by a Hydrogenated Mono-Vacancy V_(11)
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Dissociation-Chemisorption Pathways of H_2 Molecule on Graphene Activated by a Hydrogenated Mono-Vacancy V_(11)

机译:氢化单空位V_(11)活化的H_2分子在石墨烯上的解离-化学吸附途径

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摘要

Based on density functional theory, we investigate the interaction between a hydrogen molecule and a hydrogenated vacancy V_(11) in graphene surface. V_(11) is graphene mono-vacancy with two hydrogen atoms adsorbed at the edge of vacancy. The hydrogen molecule physisorbed on deformed V_(11) is shown to dissociate producing a known stable vacancy V211, in which two carbon atoms are mono-hydrogenated and another is di-hydrogenated at the edge of the vacancy. We observe that an energy barrier, which is a little above 0.5 eV, exists along all reaction pathways from V_(11) + H_2 to V211. There is a gradual change in the charge-transfer rate from a reacting hydrogen atom to the graphene surface, which reaches a common value of 0.19e per a hydrogen atom in the product. We also observed the energy barrier for a migrated hydrogen atom from the vacancy site to in-plane graphene site is around 2 eV. Since the reaction energy of H_2 on V_(11) is as large as 2.5 eV, the migration motion may be easily induced after the dissociative adsorption of H_2 on this defective graphene effectively enhancing dissociative adsorption of hydrogen molecules.
机译:基于密度泛函理论,我们研究了氢分子与石墨烯表面氢化空位V_(11)之间的相互作用。 V_(11)是具有两个氢原子吸附在空位边缘的石墨烯单空位。物理上吸附在变形V_(11)上的氢分子解离生成已知的稳定空位V211,其中两个碳原子被单氢化,另一个碳原子在空位的边缘被双氢化。我们观察到从V_(11)+ H_2到V211的所有反应路径都存在一个略高于0.5 eV的能垒。从反应中的氢原子到石墨烯表面的电荷转移速率逐渐变化,在产品中每个氢原子达到0.19e的共同值。我们还观察到氢原子从空位迁移到平面内石墨烯位点的能垒约为2 eV。由于H_2在V_(11)上的反应能量高达2.5 eV,因此在该有缺陷的石墨烯上H_2的解离吸附有效增强了氢分子的解离吸附,因此可以容易地引起迁移运动。

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