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Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

机译:基于透明银电极的高效倒ITO的有机太阳能电池,用水溶液加工ZnO中间层

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摘要

Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work. The blend of low bandgap poly[[4,8-bis[(2ethylhexyl) oxy] benzo[1,2-b: 4,5-b'] dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno[3,4-b] thiophenediyl]] (PTB7) and [6,6]-phenyl-C-71-butyric acid methylester (PC71BM) is employed as the photoactive layer here. A power conversion efficiency (PCE) of 5.55% is achieved for such indium tin oxide-(ITO-) free OSCs under AM 1.5G simulated illumination, comparable to that of ITO-based reference OSCs (PCE of 6.11%). It is found that this ZnO interlayer not only slightly enhances the transparency of MoO3/Ag cathode but also obtains a lower root-mean-square (RMS) roughness on the MoO3/Ag surface. Meanwhile, ITO-free OSCs also show a good stability. The PCE of the devices still remains above 85% of the original values after 30 days, which is slightly superior to ITO-based reference OSCs where the 16% degradation in PCE is observed after 30 days. It may be instructive for further research of OSCs based on metal thin film electrodes.
机译:在该工作中研究了高效的倒置有机太阳能电池(OSC)用MOO3(2nm)/ Ag(12nm)透明阴极和水溶液ZnO电子提取层。低带隙聚合物的混合物[[4,8-双[(2甲基己基)氧]苯并[1,2-B:4,5-B']二噻吩-2,6-二基] [3-氟-2- [ (2-乙基己基)羰基] Thieno [3,4-B]噻吩二苯基]](PTB7)和[6,6] -phenyl-C-71-丁酸甲基酯(PC71BM)在此用作光活性层。对于此类氧化铟锡(ITO-)的氧化铟锡 - (ITO-)在am 1.5g模拟照明下,可以实现5.55%的功率转换效率(PCE),与基于ITO的参考OSC(PCE为6.11%)相当。发现该ZnO中间层不仅略微增强MOO3 / Ag阴极的透明度,而且还在Moo3 / Ag表面上获得较低的根均方(RMS)粗糙度。与此同时,无氧ISOS OSC也表现出良好的稳定性。 30天后,设备的PCE仍然保持在原始值的85%以上,其略微优于基于ITO的参考OSC,其中在30天后观察到PCE的16%降解。基于金属薄膜电极进一步研究OSC的进一步研究可能是有效的。

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    China Elect Prod Reliabil &

    Environm Testing Res 110 Dongguanzhuang Rd Guangzhou 510610 Guangdong Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

    China Elect Prod Reliabil &

    Environm Testing Res 110 Dongguanzhuang Rd Guangzhou 510610 Guangdong Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

    Xidian Univ Sch Phys &

    Optoeletron Engn 2 South Taibai Rd Xian 710071 Peoples R China;

    Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T 2 South Taibai Rd Xian 710071 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学计量;
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  • 入库时间 2022-08-20 02:21:20

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