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In-situ synthesis of silicide coatings on molybdenum substrates by electrodeposition in chloride-fluoride molten salts

机译:用氯化物氟化盐电沉积地原位合成钼基底碱基硅酸盐

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摘要

Silicide coatings including MoSi2 and Si-MoSi2 were prepared on molybdenum substrates by electrodeposition in NaCl-KCl-NaF-K2SiF6 molten salt. The experimental was conducted under different cathodic current densities at the temperature of 1073 K. The effect of the current density on the microstructure, phase composition, cross-section morphologies and elemental distribution of the as-prepared coatings were investigated by means of SEM, XRD and EDX. The results revealed that the type of the silicide coatings was strongly dependent on the current density and the relevant deposition mechanism was discussed. Besides, the electrochemical behavior of silicon ion in the chloride-fluoride molten salts was also studied using cyclic voltammetry and chronopotentiometry to reveal the electroreduction mechanism. The reduction of Si(IV) to Si was proved to be a quasi-reversible or irreversible diffusion-controlled single-step reaction and the diffusion coefficient of Si(IV) calculated from chronopotentiograms was (1.28 +/- 0.25) x 10(-5)cm(2).s(-1).
机译:在NaCl-Kcl-Naf-K2SIF6熔融盐中通过电沉积在钼基底上制备包括MOSI2和Si-MOSI2的硅化物涂层。在1073k的温度下在不同的阴极电流密度下进行实验。通过SEM,XRD研究了电流密度对微观结构,相组合物,横截面形态和按摩涂层的元素分布的影响和EDX。结果表明,硅化物涂层的类型强烈取决于电流密度,并讨论了相关的沉积机制。此外,还使用循环伏安法和时分测定法研究了氯化物 - 氟化物熔融盐中的硅离子的电化学行为,以显示电荷机构。证明Si(IV)至Si的还原是一种准可逆或不可逆的扩散控制的单步反应,由计时仪计算的Si(IV)的扩散系数为(1.28 +/- 0.25)×10( - 5)cm(2)。(-1)。

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