Silicon p+–p?–n Diodes with Embedded β-FeSi2 and CrSi2 Nanocrystals: Morphology, Crystal Structure and Photoelectric Properties

摘要

The p+–p?–n diode structures with a variable number of β-FeSi2 and CrSi2 nanocrystal (NC) bilayer were studied at room and liquid nitrogen temperatures. The high crystal quality of Si and embedded NCs was determined by HRTEM cross-sectional data. This diode demonstrated a photoresponse in the IR region (1.02–0.8eV) which was associated with a decrease in recombination losses with the main contribution coming from CrSi2 NCs. Calculations of photoyield and its extrapolation to zero resulted in band gap values of 0.35eV at 300K and 0.46eV at 90K. The spectral sensitivity of 1.06×10?4A/W and specific detectivity of 1.38×106(cm Hz1∕2/W) were determined at λ=1.5μm and T=300K.