机译:基于III - 氮化物隧道结基光电子的进展
1Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio 43210 USA;
2Materials Department University of California Santa Barbara California 93106 USA;
1Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio 43210 USA;
Light emitting diodes; tunnel junction; hole injection; polarization; cascaded LEDs;
机译:基于III - 氮化物隧道结基光电子的进展
机译:基于隧道结的超紫光发光二极管的最新进展
机译:极性III族氮化物谐振隧道二极管的新隧道特征
机译:中红外光电器件的进展:间带级联激光器,间带级联探测器和谐振隧道二极管
机译:极化诱导的III族氮化物中的隧道结,用于光电应用。
机译:III型氮化物数字合金:InN / GaN超短周期超晶格纳米结构的电子和光电特性
机译:纳米级钽层撞击隧道结的分子装置磁性