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The Mechanism of Sulphide Film Growth on Copper in Anaerobic Sulphide Solutions Under Natural Corrosion Conditions

机译:天然腐蚀条件下厌氧硫化物溶液中铜膜生长的机理

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Background and Method: The growth mechanism of sulphide films formed on copper in anaerobic 0.1 M NaCl + 5 × 10~(-4) M Na2S solution has been investigated under natural corrosion conditions for exposure periods up to 1691 hours using scanning electron microscopy, focused ion beam cross-sectioning, and a Au marker procedure. Results and Conclusion: The film formed by a chemical deposition process via an outward growth mechanism. This process was controlled by cuprous ion transport in the film combined with sulphide diffusion in solution.
机译:背景和方法:在使用扫描电子显微镜的暴露期高达1691小时的天然腐蚀条件下研究了在厌氧0.1M NaCl + 5×10〜(-4)M Na 2 S溶液中形成的硫化物膜的生长机制。 离子束横截面,和Au标记程序。 结果与结论:通过向外生长机制通过化学沉积工艺形成的膜。 该方法是通过在薄膜中的亚铜离子输送来控制,与溶液中的硫化物扩散联合。

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