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The engineering of stilbazolium/iodocuprate hybrids with optical/electrical performances by modulating inter-molecular charge transfer among H-aggregated chromophores

机译:通过调节H-聚集的发色团中的分子间电荷转移来利用光/电气性能的斯莱基唑鎓/碘丙酸盐杂交种

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摘要

The combination of D-pi-A stilbazolium-type chromophores bearing ortho-N-alkyl substituents with iodocuprate resulted in three novel hybrids, these were, [(CMAMP)(2)(CuI3)(acetone)(0.5)](n) (1), [(HMAMP)(Cu3I4)](n) (2), and [(HMAHP)(2)(Cu5I7)](n) (3), which present natural quantum-well architectures with void spaces of quasi-2-D organic layers occupied by iodocuprate anions via C-HMIDLINE HORIZONTAL ELLIPSISI hydrogen bonds. The D-pi-A stilbazolium dyes exhibit head-to-tail arranged H-aggregations with face-to-face pi MIDLINE HORIZONTAL ELLIPSIS pi stacking interactions. Theoretical calculations suggest that the charge densities on the benzenes can be strengthened from the electron-withdrawing group (-CN) to the electron-donating group (-OH), and the -C2H5OH substituents on the ortho-N of the pyridines not only help to open up the band gaps, but also provide a steric effect for better face-to-face pi MIDLINE HORIZONTAL ELLIPSIS pi stacking interactions. Therefore, HMAHP(+) in 3 possesses the strongest face-to-face pi MIDLINE HORIZONTAL ELLIPSIS pi stacking interactions owing to the presence of a longer -C2H5OH group in the ortho-N position, and consequently, blue-shifted photoluminescence, a stronger photocurrent (0.28 mA), and a higher ON/OFF ratio (1.6 x 10(4)) can be observed in 3. In particular, electrical bistability performances can be observed in ITO/hybrids/poly (methyl methacrylate) (PMMA)/Ag devices, which are explained using Schottky emission, space-charge-limited current effect (SCLC) and Ohmic mechanisms. According to theoretical calculations, the band gap switching from the semi-conductor to the conductor (high resistance state (HRS) to low resistance state (LRS)) after trapping electrons is exclusively dominated by the pi bonding and anti-bonding orbitals of the stilbazolium dyes, which indicates a future direction for the design of stilbazolium-containing memory devices.
机译:D-PI-A硅氮杂型发色团的组合含有碘固化的邻-N-烷基取代基,导致三种新的杂交物,其中[(CMAMP)(2)(2)(丙酮)(0.5)](n) (1),[(HMAMP)(Cu 3 I4)](N)(2),和[(HMAHP)(2)(2)(2)(3),其目前具有Quasi的空隙空间的天然量子阱架构通过C-Hmidline水平椭圆溶液碘化丙酸盐阴离子占用的-2-D有机层。 D-PI-A斯蒂巴唑鎓染料与面对面PI中线水平椭圆叠层相互作用表现出头部到尾部排列的H-聚集。理论计算表明,苯上的电荷密度可以从吸电子基团(-CN)加强到电子给予的基团(-OH),以及吡啶的ortho-N上的-C2H5OH取代基不仅有助于帮助为了开辟带隙,还为更好的面对面PI中线水平椭圆堆叠相互作用提供了一个空间效果。因此,3中的HMAHP(+)具有最强的面对面PI中线水平椭圆PI堆叠相互作用,由于在Ortho-N位置的较长-C2H5OH基团,并且因此蓝移光发光,更强光电流(0.28mA)和更高的开/关比(1.6×10(4))可以在3中观察到3.特别地,可以在ITO /杂交/聚(甲基丙烯酸甲酯)(PMMA)中观察到电体双稳态性能/ AG器件,其使用肖特基排放,空间充电限制电流效果(SCLC)和欧姆机制来解释。根据理论计算,在捕获电子之后从半导体到导体(高电阻状态(HRS))切换到导体的带隙(高电阻状态(HRS))专门由斯莱巴唑的PI键合和抗粘接轨道支配染料,表明含斯蒂巴唑鎓的存储器件设计的未来方向。

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