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New low power differential VCO circuit designs with active load and IMOS varactor

机译:新的低功耗差分VCO电路设计,具有主动负载和IMOS变容仪

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In this paper, low power differential voltage-controlled oscillators (VCOs) have been reported utilizing the active load and inversion mode MOSFET (IMOS) varactor in the delay stages. VCO circuits operation is based on two NOR gates in differential mode, variations in gate control voltage of the NMOS/PMOS active load, and the varactor control voltage of IMOS. For VCO based on NMOS active load, variations in gate control voltage from 1.0 V to 2.0 V exhibit frequency variations from 6.687 GHz to 6.395 GHz. For VCO based on PMOS active load, variations in gate control voltage of PMOS active load from -0.5 V to 0.5 V provide frequency variations from 5.726 GHz to 6.142 GHz. For VCO based on IMOS varactor, variations in varactor control voltage of IMOS from 1.0 V to 2.0 V shows variations in output frequency from 3.796 GHz to 4.499 GHz with power dissipation of 2.06 mW. Proposed VCOs shows a phase noise of -76.20 dBc/Hz@1MHz for NMOS active load, -73.42 dBc/Hz@1MHz for PMOS active load and -75.63 dBc/Hz@1MHz for IMOS varactor load and the figure of merit (FoM) for the VCOs are -149.43 dBc/Hz, -145.58 dBc/Hz and -145.17 dBc/Hz, respectively. (C) 2020 Elsevier GmbH. All rights reserved.
机译:在本文中,在延迟阶段中利用主动负载和反转模式MOSFET(IMOS)变容级,已经报道了低功率差压控制振荡器(VCO)。 VCO电路操作基于两种差分模式的栅极,NMOS / PMOS有源负载的栅极控制电压的变化,以及IMOS的变容二极管控制电压。对于基于NMOS有源负载的VCO,栅极控制电压的变化从1.0 V至2.0 V展出6.687 GHz到6.395 GHz的频率变化。对于基于PMOS有源负载的VCO,PMOS主控负载的栅极控制电压的变化从-0.5 V至0.5V提供5.726 GHz至6.142 GHz的频率变化。对于基于IMOS容纳器的VCO,IMOS的变容控制电压为1.0 V至2.0 V的变化显示了从3.796GHz到4.499GHz的输出频率的变化,功耗为2.06 MW。提出的VCO显示了-76.20 dBc / Hz @ 1MHz的相位噪声,用于NMOS有源负载,-73.42 DBC / Hz @ 1MHz,用于PMOS有源负载和-75.63 DBC / Hz @ 1MHz,适用于IMOS变容荷荷翁和Merit(FOM)对于VCO,分别为-149.43 dbc / hz,-145.58 dbc / hz和-145.17 dBc / hz。 (c)2020 Elsevier GmbH。版权所有。

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