首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Atomic force microscopy investigation of a step generation and bunching on the (100) facet of a CH 33 NH 33 PbI 33 crystal, grown from γ‐Butyrolactone
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Atomic force microscopy investigation of a step generation and bunching on the (100) facet of a CH 33 NH 33 PbI 33 crystal, grown from γ‐Butyrolactone

机译:原子力显微镜对CH 3 3 nh 3,1/sub,3 pbi 3 3 crystal ,从γ-丁内酯生长

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摘要

> Single crystal of organolead trihalide perovskite (CH 3 NH 3 PbI 3 ) is proved to be one of the most promising semiconductor materials. Growing large size and high quality CH 3 NH 3 PbI 3 single crystals is urgently demanded by photoelectric device applications. However, the growth mechanism in microscopic scale for CH 3 NH 3 PbI 3 single crystal is still unrevealed. In this paper, we are focusing on observing surface structures on (100) facet of CH 3 NH 3 PbI 3 single crystal via atomic force microscopy (AFM), especially surface structure conversion related to growth kinetics. The results reveal that the growth of (100) facet of CH 3 NH 3 PbI 3 single crystal is dependent on bunching steps and step slope. The elemental steps, with step height about 0.45 nm, corresponded to half of the unit cell, are generated from screw dislocations when the growth rate is about 0.2 mm per hour. Elemental steps can bunch together and form bunching steps with growth rate of 0.5 mm per hour, in which only even numbers elementary steps are involved, suggesting even numbers elementary steps are stable than that of odd numbers. Additionally, in terms of the surface structures and solution stabilities, large size and high quality CH 3 NH 3 PbI 3 single crystals were grown.
机译: > onossolead trihalide perovskite的单晶(ch 3 nh 3 < /亚> PBI 3 )被证明是最有前途的半导体材料之一。生长大尺寸和高质量的CH 3 NH 3 PBI 3 单晶是光电器件应用的迫切要求。然而,CH 3 NH 3 Pbi 3 单晶的微观测量中的生长机制仍然缺陷。在本文中,我们专注于观察CH 3 NH 3 PBI 3 单晶的刻面上的表面结构,通过原子力显微镜检查(AFM),尤其是与生长动力学相关的表面结构转化。结果表明,CH 3 NH 3 PBI 3 单晶的(100)刻面的生长取决于束缚步骤和步骤斜率。当生长速率为每小时约0.2mm时,具有步进高度约0.45nm的元素步骤,对应于单位细胞的一半。元素步骤可以束在一起,并形成每小时0.5 mm 0.5 mm的生长速率的划分步骤,其中甚至甚至数量甚至是基本步骤,表明甚至数字跨越股票比奇数稳定。另外,就表面结构和溶液稳定性而言,大尺寸和高质量的CH 3 NH 3 PBI 3 单晶。

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  • 作者单位

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

    Advanced Research Center for OpticsShandong UniversityJinan 250100 China;

    College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao 266590 China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
  • 关键词

    CH 3 NH 3 PbI 3; Single crystal growth; Surface structures; AFM; Step bunching;

    机译:CH 3 NH 3 PBI 3;单晶生长;表面结构;AFM;步骤结束;

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