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首页> 外文期刊>ACS Sustainable Chemistry & Engineering >Nitrogen-Doped 3D Graphene/MWNTs Nanoframework-Embedded Co3O4 for High Electrochemical Performance Supercapacitors
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Nitrogen-Doped 3D Graphene/MWNTs Nanoframework-Embedded Co3O4 for High Electrochemical Performance Supercapacitors

机译:氮掺杂的3D石墨烯/ MWNTS纳米rameLwork嵌入式CO3O4,用于高电化学性能超级电容器

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摘要

Co3O4 nanoparticles embedded on threedimensional (3D) nitrogen-doped graphene incorporated with multiwalled carbon nanotubes (named as 3D N-G/MWNTs) are synthesized through a simple hydrothermal process and succedent microwave treatment. Small-sized Co3O4 in situ grow on the surface of N-doped multiwalled carbon nanotubes and N-doped graphene nanosheets via a rapid one-pot microwave-assisted method without adding other reagents. Owing to the good electrical conductivity unique structure of 3D N-G/MWNTs, the composite electrodes suggested a huge surface active area and an abundant three-dimensional porous configuration to provide plenty of paths for the rapid electrons/ions transportation and electron-transfer resistances. When the 1 A/g current density is applied, capacitances of 2039.4 F/g are fulfilled. Even with the charge discharge current increasing from 1 to 15 A/g, there is still 84% of the capacitance remaining. In particular, the hybrid also exhibits high energy density (5934 Wh kg(-1)) and power density(150.73 W kg(-1)), as well as cycling stability maintaining more than 94% of its primary capacitance after 6000 charge discharge cycles at a current density of 15 A g(-1). The perfect electrochemical performance of the above composites is attributed to both the particular 3D G/MVVNTs interconnected structure which could enhance electric conductivity and the nitrogen-doping networks which could give the graphene/carbon nanotube surface large numbers of defects to support high performance cobalt oxide.
机译:通过简单的水热过程和成功的微波处理合成嵌入三维含量(3D)氮掺杂石墨烯上的CO 3O4纳米颗粒掺入具有多壁的碳纳米管(名为3D N-G / MWNT)的氮掺杂石墨烯。小型Co3O4原位通过快速单罐微波辅助方法在N掺杂的多壁碳纳米管和N掺杂石墨烯纳米晶片上生长在不添加其他试剂的情况下。由于3D N-G / MWNT的良好导电性独特结构,复合电极表明了巨大的表面有源区和丰富的三维多孔配置,以提供快速电子/离子输送和电子传输电阻的大量路径。当施加1 A / G电流密度时,满足了2039.4f / g的电容。即使充电电流从1到15A / g增加,仍然存在84%的电容。特别地,杂种也表现出高能量密度(5934WH kg(-1))和功率密度(150.73Wkg(-1)),以及在6000充电放电后保持大于94%的初级电容的循环稳定性电流密度为15ag(-1)的循环。上述复合材料的完美电化学性能归因于特定的3D G / MVVNTS互连结构,该结构可以增强电导率和氮掺杂网络,其可以使石墨烯/碳纳米管表面大量缺陷以支持高性能氧化钴。 。

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