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Room temperature R-curve and stable crack growth behaviour of ZrB2-SiC ceramic composites

机译:室温r型曲线和ZRB2-SiC陶瓷复合材料的稳定裂纹生长行为

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摘要

R-curve and controlled stable crack growth behaviour of ZrB2-17vol.-%SiC and ZrB2-45vol.-%SiC ceramic composites was studied on V-notched samples using four-point bending at room temperature. The rising K-1R behaviour was determined as a function of the crack extension a with a crack bridging mechanism being dominant in such behaviour. Significant differences in crack growth rates were found within the same composition of ceramics simply as the crack length varied during crack growth processes. These differences are indicative of the significant influence of microstructural parameters of the ceramics on crack propagation. The peculiarities of stress intensity factor K-1 and the crack growth-specific behaviour in ZrB2-SiC particulate ceramic composites are discussed.
机译:ZrB2-17Vol的R曲线和受控稳定的裂纹生长行为。 - %SiC和ZrB2-45Vol.-%SiC陶瓷复合材料在室温下使用四点弯曲在V型缺口样品上研究了V-Demprched样品。 上升k-1r行为被确定为裂缝延伸机的函数,其裂缝桥接机制在这种行为中显着。 在相同的陶瓷组合物中发现裂纹生长速率的显着差异,只要在裂缝生长过程中变化。 这些差异表明陶瓷微观结构参数对裂纹繁殖的显着影响。 讨论了ZrB2-SiC颗粒状陶瓷复合材料中应激强度因子K-1的特性及裂纹生长特异性的特异性。

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