EGaIn–Metal Interfacing for Liquid Metal Circuitry and Microelectronics Integration

Ozutemiz Kadri Bugra; Wissman James; Ozdoganlar Osman Burak; Majidi Carmel

摘要

Abstract >Eutectic gallium–indium (EGaIn) has attracted significant attention in recent years for its use in soft and stretchable electronics. However, advances in scalable fabrication approaches and effective electromechanical interfaces between liquid metal (LM) traces and microelectronics are still needed to create functional soft and stretchable electronics. In this study, EGaIn–metal interfacing for the effective integration of surface‐mount microelectronics with LM interconnects is investigated. The electrical interconnects are produced by creating copper patterns on a soft‐elastomer substrate, and subsequently exposing the substrate to EGaIn, which selectively wets the Cu traces. To create strong electromechanical connection between EGaIn and microelectronics, the terminals of the LM‐coated traces are “soldered” to the metal pins of the packaged microelectronic circuits using a novel HCl‐vapor treatment. In combination, the fabrication and microelectronics‐interfacing approaches enable creating stretchable circuits composed of LM wiring and packaged microelectronics. It is found that the HCl‐vapor treatment significantly improves electrical conductivity at the LM–pin interface while enhancing the strain limit of the soft circuits and the reproducibility of the interface. The applicability of this approach in creating soft‐matter circuits is demonstrated through two illustrative examples—a circuit with a digital 9‐axis inertial measurement unit and a temperature sensor; and a circuit with a 3‐axis analog accelerometer. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> >近年来，近年来，近年来对柔软和可拉伸的电子产品有重大关注。然而，仍然需要在液态金属（LM）迹线和微电子之间的可扩展制造方法和有效机电界面的进展，以产生功能性柔软和可伸缩的电子器件。在该研究中，研究了具有LM互连的表面贴装微电子的有效整合的Egain-Metal接口。通过在软弹性体基板上产生铜图案并随后将基板暴露于eAGain的电互连，从而选择性地润湿Cu迹线。为了在Egain和Microelectronics之间创造强大的机电连接，使用新的HCl蒸汽处理将LM涂覆的迹线的端子“焊接”到包装的微电子电路的金属销。组合，制造和微电子接口接近能够产生由LM布线和封装的微电子组成的可伸展电路。发现HCL-蒸汽处理在LM引脚接口处显着提高了电导率，同时增强了软电路的应变极限和界面的再现性。通过具有数字9轴惯性测量单元和温度传感器的两个说明性示例，通过两个说明性示例来证明这种方法在创造柔软物质电路时的适用性。和带3轴模拟加速度计的电路。</ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第10期</span><b style="margin: 0 2px;">|</b><span>共13页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ozutemiz Kadri Bugra&option=202" target="_blank" rel="nofollow">Ozutemiz Kadri Bugra;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Wissman James&option=202" target="_blank" rel="nofollow">Wissman James;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ozdoganlar Osman Burak&option=202" target="_blank" rel="nofollow">Ozdoganlar Osman Burak;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Majidi Carmel&option=202" target="_blank" rel="nofollow">Majidi Carmel;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Department of Mechanical EngineeringCarnegie Mellon UniversityPittsburgh PA 15213 USA;</p> <p>Department of Mechanical EngineeringCarnegie Mellon UniversityPittsburgh PA 15213 USA;</p> <p>Department of Mechanical EngineeringCarnegie Mellon UniversityPittsburgh PA 15213 USA;</p> <p>Department of Mechanical EngineeringCarnegie Mellon UniversityPittsburgh PA 15213 USA;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=eutectic gallium–indium&option=203" rel="nofollow">eutectic gallium–indium;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=liquid phase microelectronics&option=203" rel="nofollow">liquid phase microelectronics;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=microelectronics component integration&option=203" rel="nofollow">microelectronics component integration;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=soft electronics&option=203" rel="nofollow">soft electronics;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=stretchable electronics&option=203" rel="nofollow">stretchable electronics;</a> </p> <div class="translation"> 机译：共晶镓 - 铟;液相微电子;微电子组分集成;软电子;可拉伸电子; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022435688.html">EGaIn–Metal Interfacing for Liquid Metal Circuitry and Microelectronics Integration</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ozutemiz Kadri Bugra&option=202" target="_blank" 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tuijian_authcolor"> . JU Jia-xin</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=鞠家欣&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,鞠家欣</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=BAO Jia-ming&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,BAO Jia-ming</a> <span> <a href="/conference-cn-1196/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 北京高教学会实验室工作研究会2014年度学术年会 </a> <span> <span> . 2015</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020314624276.html">基于我国高性能集成电路行业分析的上市公司融资研究——以华微电子公司和综艺股份公司为例</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=周翔&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 周翔</a> <span> . 2011</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120106195945.html">用于微电子器件的多层厚金属化结构、包含其的集成电路及包含其的集成电路的制造方法</a> <b>[P]</b> . <span> 中国专利： CN101981672A </span> <span> . 2011-02-23</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/06120209501.html">集成在微电子电路内的线圈和线圈系统及微电子电路</a> <b>[P]</b> . <span> 中国专利： CN1217355C </span> <span> . 2005.08.31</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130458601505.html">EEPROM cell with single metal level gate having a (read) interface toward the external circuitry isolated from the (write/erase) interface toward the programming circuitry</a> <b>[P]</b> . <span> 外国专利：  EP0493640B1 </span> <span> . 1995-04-19</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：具有单个金属级栅极的EEPROM单元，其（外部）电路的（读取）接口与（编程/电路的）（写入/擦除）接口隔离 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130463043514.html">EEPROM cell with single metal level gate having a (read) interface toward the external circuitry isolated from the (write/erase) interface toward the programming circuitry</a> <b>[P]</b> . <span> 外国专利：  EP0493640A1 </span> <span> . 1992-07-08</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：具有单个金属级栅极的EEPROM单元，其（外部）电路的（读取）接口与（编程/电路的）（写入/擦除）接口隔离 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130434112363.html">electrochemical method for deposition of nanoscale metal halbmetallen and compounds of these metals and / or halbmetalle at the interface between a niedertempereturentladung and an ionic liquid</a> <b>[P]</b> . <span> 外国专利：  DE102006013871A1 </span> <span> . 2007-09-27</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: 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