Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiO_x: Effect of Thickness and Temperature

摘要

Black phosphorus (BP) is one of new 2D materials that have attracted wide attention. This work reports the interfacial thermal conductance between BP flake and SiO_x using Raman spectroscopy. From 293 K down to the 223 K, eight BP flakes in a thickness range of 16.6-113.7 nm are characterized. At 293 K, the largest interfacial thermal conductance is 1.14 × 10~8 W m~(-2) K~(-1) for a 82.1 nm thick BP flake, and the smallest one is 2.17 × 10~7 W m~(-2) K~(-1) for a 26.6 nm thick BP flake. Such large interfacial thermal conductance can be attributed to the excellent interface contact and strong phonon coupling between BP and SiO_x. The measured interfacial thermal conductance has a one-fold up to around four-fold increase with decreased temperature from 293 to 223 K, which is a result of thermal-expansion-mismatch induced variation in the morphology of BP flakes. Additionally, it demonstrates no thickness- dependent behavior. It is speculated the intrinsic thickness dependence is weak and is overshadowed by the large variation in the interface contact of different samples. As a new 2D material, BP shows great potential to be a thermal interface material for heat dissipation in electronics.