Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

摘要

p-Type and n-type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 mu m under optimized printing conditions. High-performance OTFTs are fabricated using these electrodes and printed p-type and n-type organic semiconductors, each achieving a mobility of 0.2 cm(2) V-1 s(-1) at a channel length of 50 mu m. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse offset printing. The inverter circuits successfully operate at a supply voltage as low as 2.5 V with a high signal gain of 14. These results are expected to contribute greatly to the development of integrated circuits with high-speed operation using OTFTs.