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机译:紫外线暴露下解释Yb〜(3 +)掺杂Zro_2磷光体浓度猝灭的热致发光响应和诱捕参数及理论模型
International and Inter University Centre of Nanoscience and Nanotechnology Mahatma Gandhi University Kottayam 686560 India;
Department of Applied Physics Bhilai Institute of Technology (Seth Balkrishan Memorial) Near Bhilai House Durg CG 491001 India;
Department of Chemistry Govt. V Y T PG Autonomous College Durg 491001 India;
Thermoluminescence signal; Yb~(3+)-doped ZrO_2; X-ray diffraction; scanning electron microscopy method; 3T1R model.;
机译:紫外线暴露下解释Yb〜(3 +)掺杂Zro_2磷光体浓度猝灭的热致发光响应和诱捕参数及理论模型
机译:Yb〜(3+)浓度对ZrO_2:Er〜(3 +),Yb〜(3+)荧光粉上转换发光性能的影响
机译:Er〜(3 +)/ Yb〜(3+)共掺杂Gd_2(WO_4)_3荧光粉中依赖泵浦路径的浓度猝灭和绿色上转换和下转换发光的温度效应
机译:UV照射K_3LA(PO_4)_2:PR〜(3+)磷光体的热致发光响应和动力学参数
机译:校正:通过优化单斜醚Gd2O3:ER3 +; YB3 +共掺杂磷光体的掺杂剂浓度优化的3T1R模型和调整热致发光强度。