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首页> 外文期刊>Acta Crystallographica, Section B. Structural Science >Influence of hydrogen bonding on the second harmonic generation effect: neutron diffraction study of 4-nitro-4 '-methylbenzylidene aniline
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Influence of hydrogen bonding on the second harmonic generation effect: neutron diffraction study of 4-nitro-4 '-methylbenzylidene aniline

机译:氢键对二次谐波产生效应的影响:4-硝基-4'-甲基亚苄基苯胺的中子衍射研究

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摘要

A neutron diffraction study of the non-linear optical (NLO) material 4-nitro-4' -methylbenzylidene aniline (NMBA) is presented. NMBA exhibits a large macroscopic second-order NLO susceptibility, chi ((2)), and this study shows that hydrogen bonding is, in part, responsible for this. No hydrogen bonding was reported in the X-ray study [Ponomarev et al. (1977). Sov. Phys. Crystallogr. 22, 223-225], whereas the present work shows that C-H . . .X hydrogen bonds (where X = N, O or pi) direct the nature of the three-dimensional lattice. C-H . . .X (X = N or O) hydrogen bonds are common; however, C-H . . .X hydrogen-bond motifs are relatively rare. Such intermolecular interactions help extend the molecular charge transfer into the supramolecular realm, the charge transfer originating as a consequence of the high level of molecular planarity and strong donor-to-acceptor interactions. Molecular planarity, coupled with the favourable nature of the hydrogen bonds, results in parallel stacking of molecules in both the a and c crystallographic directions with extremely close interplanar spacings. Such a combination of influential hydrogen-bonding characteristics accounts, in part, for the large second-order NLO output of the material since the phenomenon is so critically dependent upon the nature of the charge transfer. [References: 32]
机译:提出了一种非线性光学(NLO)材料4-硝基-4'-甲基亚苄基苯胺(NMBA)的中子衍射研究。 NMBA表现出较大的宏观二阶NLO磁化率chi((2)),这项研究表明,氢键在某种程度上是造成这种情况的原因。 X射线研究中没有氢键的报道[Ponomarev等。 (1977)。 Sov。物理Crystallogr。 22,223-225],而目前的工作表明C-H。 。 .X氢键(其中X = N,O或pi)指导三维晶格的性质。 C-H 。 X(X = N或O)氢键很常见;但是,C-H。 。 .X氢键基序相对较少。这种分子间的相互作用有助于将分子电荷转移扩展到超分子领域,电荷转移是由于分子平面性高和强的供体-受体相互作用而产生的。分子平面性与氢键的有利性质相结合,导致分子在a和c结晶方向上平行堆积,且晶面间距非常接近。这种有影响力的氢键特性的组合部分地解释了该材料的大量二​​阶NLO输出,因为该现象非常关键地取决于电荷转移的性质。 [参考:32]

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