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首页> 外文期刊>RSC Advances >Microwave-assisted ionothermal synthesis of SnSex nanodots: a facile precursor approach towards SnSe2 nanodots/graphene nanocomposites
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Microwave-assisted ionothermal synthesis of SnSex nanodots: a facile precursor approach towards SnSe2 nanodots/graphene nanocomposites

机译:SNSEX纳米蛋白的微波辅助离子液合成:朝向SNSE2纳米蛋白/石墨烯纳米复合材料的容易前体方法

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摘要

Presented here is a facile approach towards spherical SnSe2 nanodots/graphene nanocomposites via an ionic liquid media assembly process, which involved an easily scaled-up microwave-assisted ionothermal synthesis of SnSex nanodots (NDs) as precursors by the reaction of elementary tin and selenium in (Bmmim)Cl (Bmmim = 1-butyl-2,3-dimethyl imidazolium) followed by an assembly process under ambient conditions and subsequent thermal treatment. The regulation of the content of SnSe2 NDs could be conveniently achieved by varying the ratio of ND precursor to graphene oxide (GO). As evidenced by TG-MS and FTIR analysis, the assembly process could be attributed to the electrostatic interaction between the anionic GO and the positively charged SnSex NDs, which are fixed in the IL cation layer around the NDs as a medium. This conclusion was further confirmed by the TEM micrographs, which showed a constant particle size in the precursor and in the nanocomposites after thermal treatment. Lithium storage characterizations showed that the capacity of the as-prepared nanocomposite remained at 659 mA h g(-1) after 30 cycles at a current density of 150 mA g(-1), which is 1.5-times better than the theoretical capacity of SnSe2 (426 mA h g(-1)) and superior to the capacities of the previously reported SnSe2 nanoplate/graphene composite and many other tin selenide electrodes. Thus, the new approach represents a promising, simple, and scalable synthetic protocol for the fabrication of lamellar metal dichalcogenide (LMD) NDs/graphene nanocomposites.
机译:这里介绍的是通过离子液体介质装配过程中,其通过元素锡和硒的在反应中涉及SnSex纳米点(NDS)作为前体的容易按比例放大的微波辅助离子热合成向球形SnSe2纳米点/石墨烯的纳米复合材料的简便方法(BMMIM)氯(BMMIM = 1-丁基-2,3-二甲基咪唑鎓),接着在环境条件和随后的热处理下的组装过程。 SnSe2 ND的内容的调节可通过改变前体ND的比为氧化石墨烯(GO)来方便地实现。如由TG-MS和FTIR分析,组装过程可以归因于阴离子GO和带正电的ND SnSex,其被固定在围绕各ND作为介质的IL阳离子层之间的静电相互作用。这个结论是通过TEM显微照片,其前体和在热处理后的纳米复合材料显示出恒定粒径进一步证实。锂存储表征表明,所制备的纳米复合材料的容量保持在659毫安汞柱(-1)后的150毫安克(-1),其比SnSe2的理论容量的1.5倍更好的电流密度30个循环(426毫安汞柱(-1)),并优于以前报道SnSe2纳米板/石墨烯复合物和许多其它硒化锡电极的容量。因此,新的方法代表一个有前途的,简单的,可扩展的合成为层状金属二硫属化物(LMD)个ND /石墨烯的纳米复合材料的制造协议。

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  • 来源
    《RSC Advances》 |2016年第12期|共8页
  • 作者单位

    Chinese Acad Sci Fujian Inst Res Struct Matter State Key Lab Struct Chem Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter State Key Lab Struct Chem Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter State Key Lab Struct Chem Fuzhou 350002 Fujian Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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