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首页> 外文期刊>RSC Advances >Plasma-assisted electrolytic synthesis of In(OH)(3) nanocubes for thermal transformation into In2O3 nanocubes with a controllable Sn content
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Plasma-assisted electrolytic synthesis of In(OH)(3) nanocubes for thermal transformation into In2O3 nanocubes with a controllable Sn content

机译:等离子体辅助电解合成(OH)(3)纳米核,用于热转化为In2O3纳米核,可控SN含量

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摘要

In addition to conventional wet-chemical methods for producing Sn-doped indium oxide (ITO) nanostructures, structural transformation from an ionic compound of indium hydroxide (In(OH)(3)) into indium oxide (In2O3) is a facile route for tailoring the dimensions, morphologies and compositions of In2O3 nanostructures. As a novel wet-chemical approach for the synthesis of In(OH)(3) nanostructures, here we report a plasma-assisted electrolytic process where the In3+ and Sn4+ generated by plasma discharges on the surface of an In/Sn alloy anode hydroxylate, nucleate and grow to form single crystal In(OH)(3) nanocubes. It was found that the In(OH)(3) nanocubes reconstructively decomposed into small crystallites of bixbyite-type c-In2O3 with a diameter of similar to 5-10 nm during the thermal transformation while the parent cube-shaped morphology of the In(OH)(3) nanocubes remained unchanged. Compositional analysis revealed that the content of Sn in the final ITO nanocube product could be effectively controlled by the starting In/Sn ratio of the alloy anode. As a result, the doping-level of Sn significantly influenced the electrical conductivity of the ITO nanocubes with the optimal conductivity of 10.47 S cm(-1) with a 15 wt% Sn content. The liquid-phase plasma technique is cost-effective and a continual process, and a high yield of 3.6 g hour(-1) could be achieved in our simple lab-scale synthetic setup, suggesting great potential for industrial mass-production of high-quality ITO nanoparticles.
机译:除了用于制造锡掺杂的氧化铟(ITO)的纳米结构,从氢氧化铟的离子性化合物的结构变换(在(OH)(3))为氧化铟(氧化铟)的常规湿化学方法是用于剪裁一个浅显的路线的尺寸,形貌和氧化铟纳米结构的组合物。至于在合成的新的湿化学方法(OH)(3)的纳米结构,这里,我们报告其中IN3 +和SN4 +生成由等离子体放电的In的表面上的等离子体辅助电解过程/ Sn合金阳极羟化,核并生长形成单晶在(OH)(3)纳米立方体。结果发现,在In(OH)(3)的热转化过程中纳米立方体reconstructively分解为方铁锰矿型μc-氧化铟的小的微晶直径为类似于5-10纳米,而在母体立方体形形态( OH)(3)纳米立方体保持不变。组成分析表明,Sn的最终ITO纳米立方体产物中的含量可以由合金阳极的起始输入/ Sn比得到有效控制。其结果是,Sn的掺杂级影响显著与10.47小号厘米(-1)的最佳导电性的ITO纳米立方体具有15重量%的Sn的含量的导电性。液相等离子体技术是成本效益和一个持续的过程,和3.6 g小时(-1)可以在我们的简单的实验室规模合成的设置来实现,这对于工业规模的生产的巨大潜力的高收率的高品质ITO纳米粒子。

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  • 来源
    《RSC Advances》 |2016年第24期|共6页
  • 作者单位

    Hanyang Univ Dept Fus Chem Engn Ansan 426791 South Korea;

    Hanyang Univ Dept Fus Chem Engn Ansan 426791 South Korea;

    Hanyang Univ Dept Fus Chem Engn Ansan 426791 South Korea;

    Hanyang Univ Dept Fus Chem Engn Ansan 426791 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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