Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

摘要

The surface morphology of molybdenum silicide (MoxSi1-x) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicideassisted nanopatterning of silicon surfaces by IBS. For this purpose, MoxSi1-x films with compositions below, equal and above the MoSi2 stoichiometry (x = 0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated MoxSi1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated MoxSi1-x. Contrary to silicon, MoxSi1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated MoxSi1-x films with 1 keV Ar(+ )at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and MoxSi1-x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on MoxSi1-x under grazing incidence is also attributed to the dominance of sputtering effects under this geometry. In