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机译:SR:F同掺杂IN2O3薄膜及其对捕集状态的双重抑制效应,实现溶液过程沉积的高稳定性薄膜晶体管
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Shanghai Univ Minist Educ Key Lab Advance Display &
Syst Applicat Shanghai 200072 Peoples R China;
Shanghai Univ Sch Mat Sci &
Engn Shanghai 201800 Peoples R China;
Sr:F co-doping; thin film transistor; dual inhibition effect; stability; solution process;
机译:SR:F同掺杂IN2O3薄膜及其对捕集状态的双重抑制效应,实现溶液过程沉积的高稳定性薄膜晶体管
机译:用于薄膜晶体管的固溶处理的F掺杂ZnO(ZnO:F),并通过与碱金属共掺杂来提高稳定性
机译:使用超薄溶液处理的ZrO的低压高稳定性InZnO薄膜晶体管<公式Formulatype =“ inline”> src =“ / images / tex / 570.gif” alt =“ _ {x}”> formula>电介质
机译:基于In2O3纳米晶体的高性能溶液处理薄膜晶体管
机译:固溶处理后过渡金属氧化物半导体电子产品:高性能薄膜晶体管和/或低温处理薄膜
机译:溶液法制备双层ZnO / In2O3薄膜晶体管的电学特性研究
机译:偏置溶液加工的IN2O3薄膜晶体管稳定性