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Theoretical investigation of integratable photonic crystal nanobeam all-optical switching with ultrafast response and ultralow switching energy

机译:具有超快响应和超级开关能量的整合光子晶体纳米束全光切换的理论研究

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摘要

High-performance all-optical switching is of paramount importance to realize integrated photonic circuit. Due to the ultra-sharp resonance mode, it is demonstrated that Fano resonance is far superior to Lorentz resonance for the implementation of all-optical switching. However, it is still a difficulty to realize an integratable all-optical switching with faster response and lower switching energy simultaneously. In this work, we propose double Fano resonances based all-optical switching composed of a silicon-polymer compound photonic crystal nanobeam (PCN) side-coupled with a photonic crystal nanobeam cavity (PCNC). The pump and probe wavelengths locate at the position of two Fano resonant modes. Introducing the excellent Kerr nonlinearity of polymer materials, all-optical switching dynamics are investigated explicitly by numerical pump-probe technique based on the finite-difference time-domain method. Associated with the sharp transmission profile of Fano resonance modes and excellent nonlinear optical property of polymer, sub-picosecond switching time and sub-picojoule switching energy can be realized simultaneously with in-plane pumping scheme. Such PCN-PCNC structures are compact and can be fabricated based on the silicon-on-insulator material, which are compatible with the complementary-metal-oxide-semiconductor technology. Our results eliminate the obstacles for the realization of high-performance optical switching, and unlock the potential for the construction of integrated photonic circuits.
机译:高性能全光切换至关重要,以实现集成的光子电路。由于超尖锐的共振模式,据证明FANO共振远远优于Lorentz的共振,以实现全光切换。然而,仍然难以同时实现具有更快的响应和更低的开关能量的可接整的全光切换。在这项工作中,我们提出了基于的双扇形共振,其由侧面与光子晶体纳米腔(PCNC)侧耦合的硅 - 聚合物化合物光子晶体纳米射(PCN)组成。泵和探针波长位于两个FANO谐振模式的位置。基于有限差分时域法,通过数值泵探头技术明确研究了聚合物材料的优秀克尔非线性,通过数值泵探头技术明确研究。与FANO谐振模式的尖锐传输轮廓相关联,聚合物的优异非线性光学性能,可以同时与面内泵送方案同时实现亚微微秒切换时间和子微微杂音切换能量。这种PCN-PCNC结构紧凑,并且可以基于绝缘体内材料的硅 - 绝缘体材料制造,其与互补金属氧化物半导体技术兼容。我们的结果消除了实现高性能光学切换的障碍,并解锁了集成光子电路的构造潜力。

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