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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >In-beam creep of SiCf/SiC minicomposites under uniaxial tensile loading
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In-beam creep of SiCf/SiC minicomposites under uniaxial tensile loading

机译:单轴拉伸载荷下SICF / SiC小型复合材料的束束蠕变

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摘要

A newly developed clamping system for ceramic specimen is described in the present report. By using this system, the uniaxial tensile loading was first successfully applied up to fracture (950 MPa) on a SiCf/SiC minicomposite. A minicomposite is a 1D model composite. It consists of a SiC-based fiber tow embedded in a SiC matrix, which has a diameter of about 0.5 mm. Afterwards, the irradiation creep properties of SiCf/SiC minicomposites were studied. In-situ creep was performed in an in-beam creep device under uniaxial tensile stresses from 40 to 382 MPa during homogeneous helium irradiation. Homogenous irradiation was carried out by helium implantation with energies varying from 0 to 45 MeV. The displacement dose rate was 1.2 x 10(-6) dpa/s. The average temperature was controlled to 700 and 900 degrees C within +/- 15 degrees C. Irradiation creep compliance of minicomposite was measured to be 3.07 x 10(-5) and 5.43 x 10(-5) dpa(-1) MPa-1 at 700 degrees C and 900 degrees C, respectively. (c) 2020 Elsevier B.V. All rights reserved.
机译:本报告中描述了一种用于陶瓷样本的新开发的夹紧系统。通过使用该系统,首先成功地应用于SICF / SiC的Minicomposite上的裂缝(950MPa)的单轴拉伸载荷。 Minichopite是1D型号复合材料。它由嵌入的基于SiC的纤维丝束组成,其具有约0.5mm的直径。然后,研究了SICF / SiC微内复合材料的照射蠕变性质。在均匀氦照射期间在单轴拉伸应力下在单轴拉伸应力下进行原位蠕变,在均匀氦辐射期间在40至382MPa下进行。通过从0至45meV变化的能量,通过氦气植入进行均匀辐射。位移剂量率为1.2×10(-6)DPA / s。将平均温度控制在700和900摄氏度内,在+/- 15摄氏度内。测量Minichope的照射蠕变顺应性为3.07×10( - 5)和5.43×10(-5)DPA(-1)MPa- 1分别为700℃和900摄氏度。 (c)2020 Elsevier B.v.保留所有权利。

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