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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Interatomic potentials of W-V and W-Mo binary systems for point defects studies
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Interatomic potentials of W-V and W-Mo binary systems for point defects studies

机译:W-V和W-MO二元系统的插轨电位点缺陷研究

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摘要

Interatomic potentials for tungsten-vanadium (W-V) and tungsten-molybdenum (W-Mo) binary systems have been developed based on Finnis-Sinclair formalism. The potentials are based on an accurate previously developed potential of pure W. Potential parameters of V-V, Mo-Mo, W-V and W-Mo were determined by fitting to a large database of experimental data as well as first principle calculations. These potentials were able to describe various fundamental physical properties of pure V and Mo, such as a lattice constant, cohesive energy, elastic constants, bulk modulus, vacancy and self-interstitial atom formation energies, stacking fault energies and a relative stability of <100> and 1/2 <111> interstitial dislocation loops. Other fundamental properties of the potentials described included alloy behaviours, such as the formation energies of substitutional solute atoms, binding energies between solute atoms and point defects, formation energies and lattice constants of artificial ordered alloys. These results are in reasonable agreement with experimental or first principle results. Based on these results, the developed potentials are suitable for studying point defect properties and can be further used to explore displacement cascade simulations. (C) 2020 Elsevier B.V. All rights reserved.
机译:基于芬尼斯 - 辛克莱形式主义,开发了钨钒(W-V)和钨 - 钼(W-MO)二元系统的内部势。电位基于纯W.纯W.V-V,Mo-Mo,W-V和W-Mo的潜在参数的准确的先前显影电位是通过拟合到大型实验数据的大数据库以及第一原理计算来确定。这些潜力能够描述纯V和MO的各种基本物理性质,例如晶格常数,粘性能量,弹性常数,散装模量,空缺和自隙原子形成能量,堆叠故障能量和<100的相对稳定性>和1/2 <111>间隙位错环。所描述的电位的其他基本性质包括合金行为,例如替代溶质原子的形成能量,溶质原子和点缺陷之间的结合能,形成能量和人造有序合金的晶格常数。这些结果与实验或第一个原则结果合理一致。基于这些结果,所发达的电位适用于研究点缺陷特性,并且可以进一步用于探索位移级联模拟。 (c)2020 Elsevier B.v.保留所有权利。

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