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Investigation of the nucleation delay time in Al-based metallic glasses by high rate calorimetry

机译:高速量热法研究铝金属玻璃中的成核延迟时间

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During isothermal annealing at temperatures lower than the crystallization onset temperature, T-x, measured during continuous heating, the Al88Y7Fe5 metallic glass undergoes a period of delay time (tau) before the primary crystallization reaction. The delay time is an important parameter, which is closely related with the transport behavior and can be used to calculate the attachment frequency coefficient and steady state nucleation rate. Previously, tau was usually determined from the nanocrystal number density vs. annealing time plot through tedious TEM measurements. Now, a more effective approach to measure tau has been developed by analyzing the T-g shift resulting from annealing with high rate differential scanning calorimetry (FlashDSC). With the increase of annealing time (t(annealing)), T-g shifts to higher temperatures and in the T-g vs. t(annealing) plot, there is a break point in slope. Before this break point, no Al nanocrystals could be detected by transmission electron microscopy (TEM) but after this break point, Al nanocrystals were identified by TEM. Thus, the break point time corresponds to the onset of Al nanocrystal formation and the delay time. The underlying mechanism is unveiled through the matrix composition measurement by energy dispersive spectroscopy (EDS). The analysis reveals that before the break point the amorphous matrix composition is unchanged by annealing so that T-g shifts solely due to the increased glass stability through a relaxation process. After the break point, the precipitation of Al nanocrystals induces a composition change in the amorphous matrix so that T-g shifts to higher temperatures because of both the relaxation and the composition change effects.
机译:在等温退火期间在低于结晶开始温度的温度下,在连续加热期间测量的T-X,Al88Y7Fe5金属玻璃在初级结晶反应之前经历延迟时间(TAU)。延迟时间是与传输行为密切相关的重要参数,并且可用于计算连接频率系数和稳态成核速率。以前,通过繁琐的TEM测量,TAU通常由纳米晶数密度与退火时间图决定。现在,通过分析用高速率差扫描量热法(FlashDSC)的退火产生的T-G移位来开发更有效地测量TAU的方法。随着退火时间的增加(T(退火)),T-G转移到较高温度和T-G与T(退火)图中,斜率下有断点。在该断裂点之前,可以通过透射电子显微镜(TEM)检测NO Al纳米晶体,但在该断裂点之后,通过TEM鉴定Al纳米晶体。因此,断裂点时间对应于Al纳米晶体形成和延迟时间的开始。通过能量分散光谱(EDS)通过基质组合物测量推出底层机构。该分析显示,在断裂点之前,通过退火,无定形基质组合物不变,使得T-G仅由于通过弛豫过程而增加的玻璃稳定性。在断裂点之后,Al纳米晶体的沉淀诱导非晶基质中的组成变化,使得由于弛豫和组成变化效应而转变为较高的温度。

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