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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Tailored near-infrared-emitting colloidal heterostructured quantum dots with enhanced visible light absorption for high performance photoelectrochemical cells
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Tailored near-infrared-emitting colloidal heterostructured quantum dots with enhanced visible light absorption for high performance photoelectrochemical cells

机译:具有增强的可见光吸收的高性能光电化学电池的近红外发射胶体异质结构量子点定制

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摘要

Colloidal heterostructured CuGaS2 (CGS)/CdS core/shell quantum dots (QDs) with a wurtzite (WZ) phase were synthesized via a facile two-step technique. As compared to the bare CGS QDs, the optical properties of such heterostructured CGS/CdS core/shell QDs were tailored to show largely enhanced light absorption in the visible range and an emission peak in the near-infrared (NIR) region at a wavelength of similar to 816 nm. As proof of concept, these core/shell QDs were used as light absorbers to fabricate a photoelectrochemical (PEC) cell, which exhibited a maximum saturated photocurrent density of similar to 6.5 mA cm(-2) and outstanding stability under standard one sun illumination (AM 1.5G, 100 mW cm(-2)). The results indicate that these NIR core/shell QDs are promising candidates for future QD-based optoelectronic technologies such as QD-sensitized solar cells (QDSCs).
机译:通过容易的两步技术合成具有紫立岩(WZ)相的胶体异质结构Cugas2(CGS)/ CDS核心/壳量子点(QDS)。 与裸CGS QD相比,这种异质结构化CGS / CDS核/壳QD的光学性质被定制,以在波长的波长下显示可见范围和近红外(NIR)区域中的发射峰值的大量增强的光吸收 类似于816纳米。 作为概念证明,这些核/壳QD用作光吸收剂,以制造光电化学(PEC)电池,其表现出类似于6.5 mA cm(-2)的最大饱和光电流密度,并在标准一个太阳照明下的出色稳定性( am 1.5g,100 mw cm(-2))。 结果表明,这些NIR核心/壳牌QD是未来基于QD的光电技术的候选人,如QD敏化太阳能电池(QDSC)。

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    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

    Univ Elect Sci &

    Technol China Sch Mat &

    Energy State Key Lab Elect Thin Film &

    Integrated Device Hefei Anhui Peoples R China;

    Univ Elect Sci &

    Technol China Sch Mat &

    Energy State Key Lab Elect Thin Film &

    Integrated Device Hefei Anhui Peoples R China;

    Univ Elect Sci &

    Technol China Inst Fundamental &

    Frontier Sci Chengdu 610054 Sichuan Peoples R China;

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  • 正文语种 eng
  • 中图分类 工程材料学;
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