Notched Anchor Design for Low Voltage Operation of Nanoelectromechanical (NEM) Memory Switches

摘要

Because nanoelectromechanical (NEM) memory switches generally have higher pull-in voltage (V-PI) and lower reliability than CMOS devices, reducing V-PI and maximum stress (sigma(MAX)) of NEM memory switches have been critical issues for the implementation of monolithic-3D (M3D) CMOS-NEM hybrid reconfigurable logic (RL) circuits. In this paper, a novel notched anchor design is proposed to reduce the V-PI and sigma(MAX) of NEM memory switches. Moreover, the novel design has an advantage in terms of chip density over the conventional design under the same V-PI condition. In the case of our proposed NEM memory switches, their anchors are placed in the vias of metal interconnection layers. Thus, even if notched patterns are formed on the anchors, it will be helpful to effectively increase beam length, which eventually lowers V-PI and sigma(MAX). In this manuscript, the proposed notched anchor design has been confirmed by finite-element-method (FEM) simulation. According to the simulation results, the proposed notched anchor design lowers V-PI by similar to 23% and sigma(MAX) by similar to 24%.