首页> 外文期刊>Journal of Materials Science >Air-processed organo-metal halide perovskite solar cells and their air stability
【24h】

Air-processed organo-metal halide perovskite solar cells and their air stability

机译:空气加工有机金属卤化物钙钛矿太阳能电池及其空气稳定性

获取原文
获取原文并翻译 | 示例
           

摘要

We investigate and report here the air stability of air-processed mixed halide CH3NH3PbI3-xClx perovskite solar cells. The solar cells were prepared in planar heterojunction as well as mesoscopic structures using four perovskite precursors having different wt% concentrations, viz. 13.7, 17.5, 24.1 and 38.9 wt%. Compact TiO2 layer (TiO2-bl) was used as electron transport layer, whereas poly(3-hexylthiophene) (P3HT) was used as hole transport layer. All the solar cells were processed in identical conditions. Irrespective of device structures, the higher precursor concentration resulted in larger crystalline grains, which led to higher power conversion efficiency in the solar cells. The solar cells were stored in dark and tested for their stability as per the International Summit on Organic Photovoltaic Stability (ISOS) protocol ISOS-D-1. The degradation profiles of solar cells have also been studied in natural outdoor conditions under direct sunlight as per the ISOS-O-1 protocols. Interestingly, the solar cells having larger perovskite grains exhibited higher efficiency but inferior air stability compared to those having smaller grains. Poorer stability of solar cells having larger perovskite grains has been attributed to poorer morphological and compositional stability of perovskite films.
机译:我们调查并报告这里的空气加工混合卤化物CH3NH3PBI3-XCLX钙钛矿太阳能电池的空气稳定性。使用具有不同WT%浓度的四种钙钛矿前体,在平面异质结中以及介相型结构中制备太阳能电池。 13.7,17.5,24.1和38.9wt%。将紧凑的TiO2层(TiO 2 -B1)用作电子传输层,而聚(3-己二烯烯)(P3HT)用作空穴传输层。所有太阳能电池都在相同的条件下加工。无论器件结构如何,更高的前体浓度导致较大的晶粒,导致太阳能电池的功率转换效率更高。太阳能电池在黑暗中储存并根据有机光伏稳定性(ISOS)方案ISOS-D-1上的国际峰会测试它们的稳定性。根据ISOS-O-1方案,还在直接阳光下的自然户外条件下研究了太阳能电池的降解谱。有趣的是,与具有较小颗粒的那些相比,具有较大钙钛矿晶粒的太阳能电池表现出更高的效率但较差的空气稳定性。具有较大钙钛矿颗粒的太阳能电池的较差稳定性归因于钙钛矿薄膜的较差的形态和组成稳定性。

著录项

  • 来源
    《Journal of Materials Science》 |2017年第18期|共12页
  • 作者单位

    CSIR Natl Phys Lab Advance Mat &

    Devices Div Dr KS Krishnan Marg New Delhi 110012 India;

    CSIR Natl Phys Lab Advance Mat &

    Devices Div Dr KS Krishnan Marg New Delhi 110012 India;

    CSIR Natl Phys Lab Advance Mat &

    Devices Div Dr KS Krishnan Marg New Delhi 110012 India;

    CSIR Natl Phys Lab Advance Mat &

    Devices Div Dr KS Krishnan Marg New Delhi 110012 India;

    CSIR Natl Phys Lab Advance Mat &

    Devices Div Dr KS Krishnan Marg New Delhi 110012 India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号