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Bond analysis of novel MnZrTa2O8 microwave dielectric ceramics with monoclinic structure

机译:新型MNZRTA2O8微波介质陶瓷用单斜核结构键合分析

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摘要

A new type of ceramic, namely MnZrTa2O8, was synthesized after sintering at high temperature in this work. The possible dielectric loss mechanism was discussed by Raman spectroscopy and chemical bond theory. X-ray diffraction indicated that MnZrTa2O8 formed through a reaction between ZrO2 and intermediate MnTa2O6. After sintering at 1350 degrees C, a monoclinic structure with cell parameters a = 4.8370(3) angstrom, b = 5.7163(1) angstrom, c = 5.1398(5) angstrom, beta = 91.7219 degrees was gained for ceramic. Among all bonds, Ta-O with the greatest bond ionicity and lattice energy was the dominant factor that influenced the microwave dielectric properties. The temperature coefficient of the resonant frequency tau(f) changed from - 50.55 to - 41.21 ppm/ degrees C, which was related to the lattice energy. The effect of porosity on dielectric loss was also checked and found to be significant. MnZrTa2O8 ceramic exhibited relative permittivity epsilon(r) 23.0 and enhanced quality factor Q x f 48103 GHz (at 8.97 GHz), which provided a promising candidate for electric components.
机译:在这项工作中烧结后,在烧结后合成了一种新型的陶瓷,即MnzRTA2O8。拉曼光谱和化学键理论讨论了可能的介电损耗机制。 X射线衍射表明,通过ZrO2和中间体MnTa2O6之间的反应形成MnzRTA2O8。在1350℃下烧结后,具有细胞参数A = 4.8370(3)埃,B = 5.7163(1)埃,C = 5.1398(5)埃,β= 91.7219摄氏度,陶瓷获得。在所有粘合中,具有最大的债券和格子能量的TA-O是影响微波介电性质的主要因素。谐振频率TAU(F)的温度系数从 - 50.55至-41.21 ppm / deglesc与晶格能有关。还检查了孔隙率对介电损耗的影响,并发现是显着的。 MNZRTA2O8陶瓷表现出相对介电常数ε(R)23.0和增强的质量因子Q X F 48103 GHz(8.97GHz),为电气部件提供了有希望的候选者。

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