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首页> 外文期刊>Journal of Electronic Materials >Effect of Uniform Dispersion of Single-Wall Carbon Nanotubes on the Thermoelectric Properties of BiSbTe-Based Nanocomposites
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Effect of Uniform Dispersion of Single-Wall Carbon Nanotubes on the Thermoelectric Properties of BiSbTe-Based Nanocomposites

机译:单壁碳纳米管均匀分散对BISBTE基纳米复合材料的热电性能的影响

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摘要

Thermoelectric properties of BiSbTe-based bulk nanocomposites by incorporation of single-wall carbon nanotubes (SWCNTs) in different (0.0, 0.5, 1.0 and 1.5) vol.% were investigated from 300 K to 500 K. SWCNTs were uniformly dispersed in BiSbTe via a combination of ultra-sonication, magnetic stirring and mild ball milling. Fine BiSbTe powder was formed by crushing and ball milling the lumps in an inert environment. The composites demonstrate grain boundary structures exhibiting a three-dimensional network of one-dimensional flexible SWCNTs in BiSbTe bulks. The homogenous distribution of SWCNTs in BiSbTe drastically changes the transport properties of the composites. At 0.5 vol.% of SWCNTs, the effective thermal conductivity decreases suggesting the increased phonon scattering. Meanwhile, at 1.0 vol.% and 1.5 vol.%, the conductivities of the composites somehow increases attributed to homogenous distribution of SWCNTs in the BiSbTe matrix. The increased electrical resistivity with the addition of SWCNTs implies the enhanced scattering of carriers at the grain boundaries and SWCNTs/BiSbTe interfaces. The dimensionless figure of merit somewhat decreases with the addition of 0.5 vol.% SWCNTs. The results suggest that the figure of merit can be improved by optimizing the SWCNT composition below 0.5 vol.% by adequately tailoring the thermoelectric transport.
机译:通过在不同(0.0,0.5,1.0和1.5)的单壁碳纳米管(SWCNT)掺入不同(0.0,0.5,1.0和1.5)体积的BISBTE的块状纳米复合材料的热电性能。从300k至500k中研究了%的量,通过a均匀地分散在BISBTE中的SWCNTs超超声,磁力搅拌和温和球磨的组合。通过破碎和球在惰性环境中碾碎肿块来形成细腻的BISBTE粉末。复合材料展示了在BISBTE块中展示了呈现三维柔性SWCNT的三维网络的晶粒边界结构。 BISBTE中的SWCNT的均匀分布大大改变了复合材料的运输性能。在0.5 Vol。的SWCNT%中,有效的导热率降低了暗示越脉散射。同时,在1.0体积%和1.5体积%。%,复合材料的导电性以某种方式增加,归因于BISBTE矩阵中的SWCNT的均匀分布。随着SWCNTS的增加增加的电阻率意味着诸如晶界和SWCNT / BISBTE接口的载体的增强散射。无需0.5 Vol.%SWCNTs的略微减少。结果表明,通过优化0.5 Vol的SWCNT组合物,可以通过充分定制热电传输来改善优异图。

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