A Study of the Performance of anN-Channel MOSFET Under Gamma Radiation as a Dosimeter

摘要

This paper is devoted to the effect of gamma radiation on commercial IRFP250N-channel metal oxide semiconductor field effect transistors (MOSFETs) in a dose range from 0.5 Gy up to 50 Gy. The device under investigation can be utilized for radiation therapy and dose detection and measurement. The different MOSFETs parameters such as drain currentI(D), threshold voltageV(th), sensitivityS, transconductanceG, and annealing are studied. The main goal of this work is to accurately determine the previous parameters before and after ionizing radiation. From the obtained results, one can estimate the dosage by measuring the mentioned device parameters. The study will be of benefit not only for MOSFET applications as a dosimeter, but also for selecting the type which can tolerate this kind of radiation, especially for space and satellite applications. Finally, the annealing process is done at different temperatures and time. This will aid in determining the ability of the device under test (DUT) to recover. Therefore, the fading of the DUT is studied. From our results, the MOSFET device has excellent properties as a dosimeter. Moreover, in our case, the transconductance and sensitivity were enhanced after irradiation.