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机译:Al植入的4H-SiC P-IN二极管的前进I-V特性分析,具有型缺陷诱导缺陷态引起的重组和捕获效应建模
Mohammed Khieder Univ Lab Metall &
Semiconducting Mat Biskra 07000 Algeria;
Mediterranea Univ Reggio Calabria DIIES I-89100 Calabria Italy;
Elhadj Lakhdar Univ Fac Sci Batna 05000 Algeria;
Mohammed Khieder Univ Lab Metall &
Semiconducting Mat Biskra 07000 Algeria;
Mediterranea Univ Reggio Calabria DIIES I-89100 Calabria Italy;
Silicon carbide; p-i-n diode; numerical simulations; defect states; series resistance;
机译:Al植入的4H-SiC P-IN二极管的前进I-V特性分析,具有型缺陷诱导缺陷态引起的重组和捕获效应建模
机译:{0001} 4H-SiC p-i-n二极管正向和反向恢复特性的漂移现象
机译:铝注入4H-SiC p-i-n二极管正向J-V特性的仿真和实验结果
机译:结合衬底俘获,表面俘获和热效应的改进的4H-SiC MESFET I-V模型
机译:可变寿命P-I-N二极管的物理模型和绝缘栅双极晶体管(IGBT)的二维效应
机译:高效I-V特性估计的近似单二极管光伏模型
机译:4H-SiC p-i-n二极管静态和瞬态行为的实验表征和数值分析