Ab'/> In situ bismuth-modified gallium nitride electrode for sensitive determination of cadmium (II) with high repeatability
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In situ bismuth-modified gallium nitride electrode for sensitive determination of cadmium (II) with high repeatability

机译:原位铋改性氮化镓电极,具有高可重复性的镉(II)的敏感测定

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AbstractBismuth-modified gallium nitride (Bi/GaN) electrode was fabricated using an in situ plating technique and simultaneously investigated for the detection of Cd2+by square wave anodic stripping voltammetry (SWASV). Under the optimized conditions, the Bi/GaN electrode showed good linear amperometric responses for Cd2+in the concentration range from 1 to 150μg/L. The sensitivity was 0.54418μALμg?1(i.e., 59.8598AM?1) and the limit of detection (LOD) was 0.3μg/L (i.e., 2.72nM). Furthermore, the as-prepared Bi/GaN sensor has high repeatability, and retains 95% of its initial stripping peak current after 50cycles. More importantly, the applicability of the sensor in real samples such as tap water, milk, and fetal bovine serum was researched. The recovery ranges from 92.3 to 106.7%, indicating that the as-fabricated Bi/GaN sensor has potential to monitor Cd2+in practical environments.]]>
机译:<![cdata [ 抽象 使用原位电镀技术制造铋改性氮化镓(Bi / GaN)电极并同时研究通过方波anodic剥离伏安法(SWASV)检测CD 2 + 。在优化条件下,Bi / GaN电极显示CD 2 + 在浓度范围为1至150μg/升的情况下显示出良好的线性排水响应。灵敏度为0.54418μalμg?1 (即59.8598am ?1 )和限制检测(LOD)为0.3μg/ L(即2.72nm)。此外,制备的Bi / GaN传感器具有高的可重复性,并且在50鲸圈后保留其初始汽提峰电流的95%。更重要的是,研究了传感器在真正样品中的适用性,例如自来水,牛奶和胎牛血清。恢复范围从92.3到106.7%,表明制造的BI / GaN传感器有可能在实际环境中监控CD 2 + ]]>

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