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Thickness effects of Ni on the modified boron doped diamond by thermal catalytic etching for non-enzymatic glucose sensing

机译:Ni在改进的硼掺杂金刚石中的厚度效应通过热催化蚀刻用于非酶促葡萄糖感测

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摘要

Sputtered nickel (Ni) layers modified boron-doped diamond (BDD) electrodes for non-enzymatic glucose sensor were fabricated by the thermal catalytic etching process in the hydrogen ambient. The effect of Ni thickness on the thermal catalytic etching and the electrochemical behavior of Ni/BDD electrodes for glucose oxidation were investigated. Scanning electron microscopy(SEM)and Raman spectroscopy were utilized to characterize the electrode morphology and composition, respectively. Marked by different thickness and morphology of Ni layer, three kinds of surfaces were obtained after thermal catalytic etching. The first is a roughened surface with most Ni nano-particles sinking into the BDD film, the second is with Ni micro-particles presented on the BDD film, the third is with residual lamellar Ni. Electrochemical results indicated that the electrochemical behaviors of those Ni/BDD electrodes were related to the surface structure. The second Ni/BDD electrode has the limit of detection (LOD) of 1.23 mu M with a sensitivity of 839.3 mu M-1 cm(2), which was ascribed to the numerous agglomerated Ni nano- and micro-particles presented on the roughed surface.
机译:通过氢气环境中的热催化蚀刻工艺制造溅射的镍(Ni)层改性硼掺杂的金刚石(BDD)电极。研究了Ni厚度对葡萄糖氧化Ni / Bdd电极的热催化蚀刻的影响和电化学行为。扫描电子显微镜(SEM)和拉曼光谱分别用于分别表征电极形态和组成。由Ni层的不同厚度和形态标记,热催化蚀刻后获得三种表面。首先是具有大多数Ni纳米颗粒的粗糙表面沉入BDD膜中,第二是在BDD膜上呈现的Ni微颗粒,第三是用残留的层状Ni。电化学结果表明,这些Ni / BDD电极的电化学行为与表面结构有关。第二Ni / BDD电极的检测极限(LOD)为1.23μm,灵敏度为839.3μm-1cm(2),其归因于粗糙的诸多附聚的Ni纳米和微粒表面。

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