首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Crystal structure refinement, ferroelectric and ferromagnetic properties of Ho3+ modified BiFeO3 multiferroic material
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Crystal structure refinement, ferroelectric and ferromagnetic properties of Ho3+ modified BiFeO3 multiferroic material

机译:HO3 +改性BIFEO3多体材料的晶体结构细化,铁电和铁磁性特性

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Multiferroic Bi1-xHoxFeO3 (x = 0, 0.05, 0.1) ceramics have been prepared by rapid liquid phase sintering method. The effect of Ho3+ doping on the crystal structure, dielectric, ferroelectric properties, T-N and T-M of BiFeO3 ceramics is studied. The result shows that all the peaks for Bi1-xHoxFeO3 samples can be indexed according to the crystal structure of pure BiFeO3 by XRD and the grain size from 1 to 5 mu m is observed for BiFeO3 samples with Ho3+ doped. The dielectric behavior of Bi1-xHoxFeO3 ceramics varies with frequency and temperature, which might be understood in terms of an oxygen vacancy, the displacement of Fe3+ ions and lattice phase transition. There is a perfect dielectric hysteresis phenomenon in the epsilon r-V curves of Bi1-xHoxFeO3 samples at bias voltage with 10 V. Under the action of the bias voltage, more and more dipoles are" frozen" in the bias voltage direction and quit polarization gradually, resulting in lower dielectric constant. The unsaturated P-E hysteresis loop of Bi1-xHoxFeO3 (x = 0.05, 0.1) samples is obtained with a large 2Pr of 3.08 mC/cm(2). The Pr, Mr of Bi0.9Ho0.1FeO3 sample is nearly 23, 35 times as large as that of BiFeO3, respectively. It can be inferred that Ho3+ doping in BiFeO3 ceramics is proved to be an effective way to modulate the ferroelectric and the magnetic properties. It shows that the TN of BiFeO3 changes slightly from 644 K to 638 K and the TM of Bi1-xHoxFeO3 will reduce from 878 K to 860 K with increasing Ho3+ content. It can be attributed to the Fe3+-O2+-Fe3+ super-exchange strength and the relative stability of the magnetic structure. (C) 2016 Elsevier B. V. All rights reserved.
机译:通过快速液相烧结方法制备多二二种Bi1-XhoxFeO 3(X = 0,0.05,0.1)陶瓷。研究了HO3 +掺杂对晶体结构,电介质,铁电性能,T-N和BIFEO3陶瓷T-N和T-M的影响。结果表明,Bi1-XhoxFeO3样品的所有峰可以根据XRD的纯BiFeO3的晶体结构分析,并且对于具有HO3 +掺杂的BIFEO3样品观察到1至5μm的晶粒尺寸。 Bi1-XhoxFeO3陶瓷的介电行为随频率和温度而变化,其在氧空位方面可以理解,Fe3 +离子和晶格相转变的位移。在BI1-Xhoxfeo3样品的epsilon RV曲线中有一个完美的介电滞后现象,在偏置电压下,在偏置电压的作用下,越来越多的偶极子在偏置电压方向上“冷冻”,逐渐退出极化,导致介电常数较低。获得Bi1-XhoxFeO 3(x = 0.05,0.1)样品的不饱和P-E滞后回物,具有大的2pr为3.08mc / cm(2)。 PR,Bi0.9Ho0.1fe3样品先生分别与BifeO3分别为近23,35倍。可以推断,在BifeO3陶瓷中,证明了HO3 +掺杂是调节铁电和磁性的有效方法。它表明,BIFEO3的TN略微从644 k变化到638 k,并且BI1-XHOXFEO3的TM将从878k降低到860 k,随着HO3 +含量增加。它可以归因于Fe3 + -O2 + -Fe3 +超交换强度和磁性结构的相对稳定性。 (c)2016年Elsevier B. V.保留所有权利。

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