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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Utilising unit-cell twinning operators to reduce lattice thermal conductivity in modular structures: Structure and thermoelectric properties of Ga2O3(ZnO)(9)
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Utilising unit-cell twinning operators to reduce lattice thermal conductivity in modular structures: Structure and thermoelectric properties of Ga2O3(ZnO)(9)

机译:利用单元 - 细胞孪晶操作者在模块化结构中降低晶格导热系数:Ga2O3(ZnO)的结构和热电性能(9)

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摘要

The Ga2O3(ZnO)(m) family of homologous compounds have been identified as potential thermoelectric materials, but properties are often limited due to low densification. By use of B2O3 as an effective liquid phase sintering aid, high density, high quality ceramic samples of Ga2O3(ZnO)(9) have been synthesised. The atomic structure and local chemical composition of Ga2O3(ZnO)(9) have been determined by means of high resolution X-ray diffraction and atomic resolution STEM-HAADF, EDS and EELS measurements. X-ray analysis showed that the compound crystalizes in the Cmcm orthorhombic symmetry. Atomically resolved HAADF-STEM images unambiguously showed the presence of nano-sized, wedge-shaped twin boundaries, parallel to the b-axis. These nano-scale structural features were chemically investigated, for the first time, revealing the exact distributions of Zn and Ga; it was found that Ga ions occupy sites at the junction of twin boundaries and inversion boundaries. HAADF-EDS analysis showed that the calcination step has a significant impact on crystal structure homogeneity. By use of a sintering aid and optimization of processing parameters the ceramics achieved a low thermal conductivity of 1.5-2.2 W/m.K (for the temperature range 300-900 K), a power factor of 40-90 mu W/K.m(2), leading to a ZT of 0.06 at 900 K. The work shows a route to exploit nanoscale interface features to reduce the thermal conductivity and thereby enhance the thermoelectric figure of merit in complex thermoelectric materials. (C) 2018 Elsevier B.V. All rights reserved.
机译:已经鉴定为潜在的热电材料的Ga 2 O 3(ZnO)(m)家族,但由于低致密化,性能通常受限。通过使用B2O3作为有效的液相烧结助剂,已经合成了高密度,Ga2O3(ZnO)(9)的高质量陶瓷样品。 Ga 2 O 3(ZnO)(9)的原子结构和局部化学组成已通过高分辨率X射线衍射和原子分辨率茎HAADF,EDS和EELS测量确定。 X射线分析表明,化合物结晶在CMCM正交对称中。原子上解析的HAADF-STEM图像明确地显示出纳米尺寸的楔形双界的存在,平行于B轴。这些纳米级结构特征首次进行化学研究,揭示了Zn和Ga的精确分布;发现Ga离子在双界和反转边界的交界处占据网站。 HAADF-EDS分析表明,煅烧步骤对晶体结构均匀性具有显着影响。通过使用烧结辅助助剂和处理参数的优化,陶瓷达到低导热率为1.5-2.2 W / MK(适用于300-900 k),功率因数为40-90亩(2) ,导致900 K处为0.06的ZT。该工作显示出利用纳米级接口特征的路线以降低导热性,从而提高复杂热电材料的热电数字。 (c)2018年elestvier b.v.保留所有权利。

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