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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Varistor behavior in a ternary system based on SnO2 doped with a hexavalent donor: SnO2-MnO2-WO3
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Varistor behavior in a ternary system based on SnO2 doped with a hexavalent donor: SnO2-MnO2-WO3

机译:基于SnO2的三元系统中的压敏电阻行为掺杂有六价供体:SnO2-MnO2-WO3

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摘要

Pentavalent metals have been used as donors in tin dioxide, giving it varistor characteristics when associated with densiflers such as CoO or MnO2. However, attempts to obtain varistor behavior in SnO2-based ternary systems using hexavalent donors such as W6+ have been unsuccessful to date, leading to typical linear behavior. Here it is shown that one can achieve nonlinear behavior in this kind of system, given a suitable choice of densifler (MnO2). In order to get insights into the role of WO3 content on the potential barriers responsible for varistor properties, a combination of experimental and theoretical techniques was used. Measurements revealed two minor but relevant phases, Mn3O4, and MnWO4, whose presence was explained by theoretical calculations and whose amount was estimated as a function of WO3 content. This estimate revealed a correlation between Mn3O4 amount and varistor properties, interpreted with basis on Mn defects at SnO2/Mn3O4 interfaces. WO3 content was varied to optimize the varistor properties, resulting in nonlinear coefficient alpha approximate to 6, breakdown electric field E-b > 10 kV/cm and leakage current I-l approximate to 200 mu A. This finding is expected to stimulate further investigations on SnO2-based ternary systems containing hexavalent oxides, especially using other densiflers, such as CoO. (C) 2019 Elsevier B.V. All rights reserved.
机译:五价金属已被用作在二氧化锡供体,使当与densiflers如CoO或MnO相关它变阻特性。然而,试图获得在使用六价供体如W6 +是不成功迄今为止,导致典型的线性行为SnO2基三元体系变阻器行为。这里,示出了一个可以在这种系统中实现非线性特性,给出densifler锰(MnO 2)的适当选择。为了得到见解上负责压敏电阻器性能的潜在障碍WO3含量的作用,使用的实验和理论技术的组合。测量显示两个小但相关阶段,四氧化三锰,和MnWO4,它的存在是通过理论计算和解释其数量估计为WO3含量的函数。这一估计揭示的Mn3O4量和压敏电阻特性,在的SnO2 / Mn3O4的接口上的Mn缺损基础解释之间的相关性。 WO3含量变化,以优化变阻器特性,结果非线性系数的α近似至图6,击穿电场的Eb> 10千伏/厘米和泄漏电流I近似200微米A.这一发现预期刺激上进一步调查的SnO 2为主含有6价的氧化物,尤其是在使用其它densiflers,如CoO三元体系。 (c)2019 Elsevier B.v.保留所有权利。

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