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机译:OSTM和TMOS_2的结构,机械和电子性质(TM = TI,ZR和HF):第一原理计算
Bond and Band Engineering Group Institute of High Temperature and High Pressure Physics School of Physical Science and Technology Southwest Jiaotong University Chengdu Sichuan 620031 PR China;
Bond and Band Engineering Group Institute of High Temperature and High Pressure Physics School of Physical Science and Technology Southwest Jiaotong University Chengdu Sichuan 620031 PR China;
Bond and Band Engineering Group Institute of High Temperature and High Pressure Physics School of Physical Science and Technology Southwest Jiaotong University Chengdu Sichuan 620031 PR China;
Density-functional theory; Mechanical properties; Os-based compounds;
机译:OSTM和TMOS_2的结构,机械和电子性质(TM = TI,ZR和HF):第一原理计算
机译:来自第一原理计算的电子结构,动态稳定性,弹性和光学性质MgTMN_2(TM = Ti,Zr,HF)三元氮化物
机译:通过第一性原理计算,将新型分层超导体HfCuGe_2与同构HfCuSi_2,ZrCuGe_2和ZrCuSi_2的结构,弹性和电子性质进行比较
机译:Al-TM(= Ti,Zr,Hf)-Zn系统中L1_2,DO_(22)和DO_(23)结构的第一性原理相稳定性计算
机译:准一维过渡金属三氯化物的电子性质:TIS3和ZRS3
机译:不可压缩的四方过渡金属氮化物TMN2(TM = TiZr和Hf)的电子键合分析和机械强度
机译:根据第一性原理计算,与同构HfCuSi2,ZrCuGe2和ZrCuSi2相比,新型层状超导体HfCuGe2的结构,弹性和电子性能